Lead-free Green
DS30525 Rev. 7 - 2
1 of 4
BC847BLP
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ã
Diodes Incorporated
BC847BLP
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current
I
C
100
mA
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
·
Complementary PNP Type Available (BC857BLP)
·
Ultra-Small Leadless Surface Mount Package
·
Lead Free By Design/RoHS Compliant (Note 1)
·
"Green" Device (Note 2)
·
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
D
G
H
B C
L
N
A
M
K
DFN1006-3
Dim
Min
Max
Typ
A
0.95
1.075
1.00
B
0.55
0.675
0.60
C
0.45
0.55
0.50
D
0.20
0.30
0.25
G
0.47
0.53
0.50
H
0
0.05
0.03
K
0.10
0.20
0.15
L
0.20
0.30
0.25
M
¾
¾
0.35
N
¾
¾
0.40
All Dimensions in mm
C
E
B
1
2
3
TOP VIEW
·
Case: DFN1006-3
·
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
Terminal Connections Indicator: Collector Dot
·
Terminals: Finish
¾ NiPdAu annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
·
Marking Code 1F, Dot denotes Collector Side
·
Ordering Information: See Page 3
·
Weight: 0.001 grams
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Characteristic
Symbol
Value
Unit
Power Dissipation
P
d
250
mW
Thermal Resistance, Junction to Ambient
R
qJA
400
°C/W
Thermal Characteristics
@ T
A
= 25
°C unless otherwise specified
NEW
P
RODUCT
SPICE MODEL: BC847BLP
DS30525 Rev. 7 - 2
2 of 4
BC847BLP
www.diodes.com
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 3)
V
(BR)CBO
50
--
--
V
I
C
= 10
mA, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 3)
V
(BR)CEO
45
--
--
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage (Note 3)
V
(BR)EBO
6
--
--
V
I
E
= 1
mA, I
C
= 0
DC Current Gain (Note 3)
h
FE
200
350
450
--
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage (Note 3)
V
CE(SAT)
--
80
200
250
600
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage (Note 3)
V
BE(SAT)
--
700
900
--
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage (Note 3)
V
BE(ON)
580
--
640
725
700
770
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
Collector-Emitter Cutoff Current (Note 3)
I
CBO
I
CBO
--
--
15
5.0
nA
µA
V
CB
= 30V
V
CB
= 30V, T
A
= 150°C
Gain Bandwidth Product
f
T
100
--
--
MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
--
3.0
--
pF
V
CB
= 10V, f = 1.0MHz
0
150
100
50
200
250
300
350
1
100
10
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical Collector-Emitter Saturation
Voltage vs. Collector Current
C
V,
C
O
LLECT
O
RT
O
EMITTER
SA
TURA
TION
VOL
T
AGE
(mV)
(CE)SA
T
T = 150ºC
A
T = -55ºC
A
T = 25ºC
A
T = 125ºC
A
T = 85ºC
A
Ic/Ib=20
0
50
100
0
25
50
75
100
125
150
P
,
POWER
D
ISSIP
A
TION
(mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
A
150
200
250
300
NEW
P
RODUCT
Note:
3. Short duration pulse test used to minimize self-heating effect.
DS30525 Rev. 7 - 2
3 of 4
BC847BLP
www.diodes.com
h
,
DC
CURRENT
GAIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 5,
C
Typical DC Current Gain
vs. Collector Current
1000
0.1
1
10
100
1000
1
10
100
T = -55ºC
A
T = 25ºC
A
T = 150ºC
A
T = 125ºC
A
T = 85ºC
A
Note:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
1F = Product Type Marking Code,
Dot Denotes Collector Side
Marking Information
Ordering Information
Device
Packaging
Shipping
BC847BLP-7
DFN1006-3
3000/Tape & Reel
(Note 4)
V
,
BASE-EMITTER
O
N
V
OL
T
A
GE
(mV)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 4,
C
Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
200
400
600
800
0
2
4
6
8
10
V
= 5V
CE
T = 150ºC
A
T = -55ºC
A
T = 125ºC
A
T = 85ºC
A
T = 25ºC
A
I , COLLECTOR CURRENT (mA)
Fig. 3,
C
Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Ic/Ib=20
V
,
BASE
T
O
EMITTER
S
A
T
URA
TION
VOL
T
AGE
(V)
(BE)SA
T
1
100
10
T = 150ºC
A
T = -55ºC
A
T = 125ºC
A
T = 85ºC
A
T = 25ºC
A
NEW
P
RODUCT
1F
DS30525 Rev. 7 - 2
4 of 4
BC847BLP
www.diodes.com
IMPORTANT NOTICE
LIFE SUPPORT
www.diodes.com
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
The products located on our website at
are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
NEW
P
RODUCT
Suggested Pad Layout
0.30
1.30
R = 0.05 (12x)
R = 0.05 (12x)
0.30
(2x)
0.40
(2x)
0.50
(2x)
0.30
0.90
0.20
Dimensions in mm.
0.40
0.50
0.60 0.70 0.80
solder lands
solder resist
occupied area
solder paste
0.25
0.35
(2x)
(2x)
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