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Part Number DS9502

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102199
SPECIAL FEATURES
§
Zener characteristic with voltage snap­back
to protect against ESD hits
§
High avalanche voltage, low leakage and low
capacitance avoid signal attenuation
§
Compatible to all 5V logic families
§
Space saving, low inductance TSOC surface
mount package
§
Symmetric dual­port bondout to maximize
energy dissipation in protection device
§
Industrial temperature range
SYMBOL AND CONVENTIONS
PACKAGE OUTLINE
ORDERING INFORMATION
DS9502P
6-lead TSOC package
DESCRIPTION
This DS9502 was designed as an additional ESD protection for SRAM­based battery­buffered portable
memory modules. The memory chips used for these modules have already a strong ESD­protection
structure on their I/O line. Together with the DS9502 the ESD protection level is raised to more than
27 kV (IEC 801­2 Reference model). In case of abnormal ESD hits beyond its maximum ratings the
DS9502 will eventually fail "short" thus preventing further damage.
During normal operation the DS9502 behaves like a regular 7.5V Zener Diode. When the voltage exceeds
the trigger voltage, the I/V characteristic of the device will "snapback" allowing the same or higher
amount of current to flow, but at a significantly lower voltage. As long as a minimum current or voltage
is maintained, the device will stay in the "snapback mode". If the voltage or the current falls below the
holding voltage or holding current, the device will abruptly change to its normal mode and conduct only a
small leakage current.
VCA
A
IC
C
6
1
5
2
4
3
TOP VIEW
TSOC SURFACE MOUNT PACKAGE
3.7 X 4.0 X 1.5 mm
See Mech. Drawings
Section
SIDE VIEW
DS9502
ESD Protection Diode
www.dalsemi.com
DS9502
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102199
DC CHARACTERISTICS Figure 1
DC CHARACTERISTICS DETAIL DRAWING Figure 2
TEST PULSE WAVEFORM Figure 3
TYPICAL APPLICATION Figure 4
DS9502
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102199
PHYSICAL SPECIFICATIONS
Size
See mechanical drawing
Weight
0.5 grams
ABSOLUTE MAXIMUM RATINGS*
Operating Temperature
­40°C to +85°C
Storage Temperature
­55°C to +125°C
Soldering Temperature
260°C for 10 seconds
Continuous DC Current Through Package
80 mA
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
ELECTRICAL CHARACTERISTICS (-40
°
C to +85
°
C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
Leakage Current
I
L
30
100
nA
2
Avalanche Voltage
V
AV
7.4
7.8
V
1,3
Trigger Voltage
V
TRIGGER
9.0
9.5
V
1
Trigger Current
I
TRIGGER
600
1000
mA
Holding Voltage
V
HOLD
5.5
V
1
Holding Current
I
HOLD
30
mA
Forward Voltage (-10 mA)
V
F
-0.7
-0.8
V
4
Forward Current (-0.7V)
I
F
-10
-100
mA
4
Maximum Peak Current
I
PP
2.0
A
5
Continuous Current Through Diode
I
CC
±
160
mA
6
CAPACITANCE (t
A
=25
°
C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
Junction Capacitance (5V)
C
J5
55
pF
1
Junction Capacitance (0V)
C
J0
100
pF
1
THERMAL RESISTANCE
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
Junction To Package
R
JC
75
K/W
Junction To Ambient
R
JA
200
K/W
NOTES:
1.
All voltages are referenced from Cathode to Anode.
2.
At 7.0V.
3.
At 0.3
µ
A.
4.
Typical values at room temperature.
5.
See pulse specification.
6.
In either direction (forward or reverse) through the diode (pins 1 & 6 and 2 & 5 tied together,
otherwise +80 mA max).