CYStech Electronics Corp.
Spec. No. : C214N3-H
Issued Date : 2002.05.11
Revised Date : 2002.12.23
Page No. : 1/4
BTNA14N3
CYStek Product Specification
Gentral Purpose NPN Epitaxial Planar Transistor
BTNA14N3
Description
· The BTNA14N3 is a darlington amplifier transistor
· Complementary to BTPA64N3
.
Equivalent Circuit
Absolute Maximum Ratings
(Ta=25
°C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
0.3
A
Power Dissipation
Pd
225
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
BTNA14N3
SOT-23
BBase
CCollector
EEmitter
CYStech Electronics Corp.
Spec. No. : C214N3-H
Issued Date : 2002.05.11
Revised Date : 2002.12.23
Page No. : 2/4
BTNA14N3
CYStek Product Specification
Characteristics
(Ta=25
°C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BVCBO 30 -
-
V IC=100uA
BVCES 30 -
-
V IC=100uA
BVEBO 10 -
-
V IE=10uA
ICBO - - 100
nA
VCE=30V
IEBO - - 100
nA
VEB=10V
*VCE(sat) -
- 1.5 V IC=100mA,
IB=0.1mA
*VBE(on) -
- 2.0 V VCE=5V,
IC=100mA
*hFE1 10K -
-
VCE=5V,
IC=10mA
*hFE2 20K -
-
VCE=5V,
IC=100mA
fT
125
-
-
MHz
VCE=5V, IC=10mA, f=100MHz
Cob - - 6 pF
VCB=10V,
f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle2%
Characteristic Curves
Current Gain vs Collector Current
1000
10000
100000
1
10
100
1000
Collector Current---IC(mA)
Current Gain---
HFE
HFE@VCE=5V
Saturation Voltage vs Collector Current
100
1000
10000
1
10
100
1000
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=1000IB
CYStech Electronics Corp.
Spec. No. : C214N3-H
Issued Date : 2002.05.11
Revised Date : 2002.12.23
Page No. : 3/4
BTNA14N3
CYStek Product Specification
Saturation Voltage vs Collector Current
1000
10000
1
10
100
1000
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=1000IB
ON Voltage vs Collector Current
100
1000
10000
0.1
1
10
100
1000
Collector Current ---IC(mA)
ON Voltage --- (mV)
VBE(ON)@VCE=5V
Cutoff Frequency vs Collector Current
0.1
1
1
10
100
Collector Current---IC(mA)
Cutoff Frequency---FT(GHZ)
FT@VCE=5V
PD - Ta
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature ---Ta( )
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C203N3-H
Issued Date : 2002.05.11
Revised Date : 2002.12.23
Page No. : 4/4
BTNA14N3
CYStek Product Specification
SOT-23 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1102
0.1204 2.80 3.04 J 0.0034
0.0070 0.085 0.177
B 0.0472
0.0630 1.20 1.60 K 0.0128
0.0266 0.32 0.67
C 0.0335
0.0512 0.89 1.30 L 0.0335
0.0453 0.85 1.15
D 0.0118
0.0197 0.30 0.50 S 0.0830
0.1083 2.10 2.75
G 0.0669
0.0910 1.70 2.30 V 0.0098
0.0256 0.25 0.65
H
0.0005
0.0040
0.013
0.10
Notes:
1.Dimension and tolerance based on our Spec. dated Feb. 18,2002.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
· Lead: 42 Alloy ; solder plating
· Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
· All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
· CYStek reserves the right to make changes to its products without notice.
· CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
· CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style: Pin 1.Base 2.Emitter 3.Collector
Marking:
TE
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
1N
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