32K x 8 Static RAM
CY7C199C
Cypress Semiconductor Corporation
·
3901 North First Street
·
San Jose
,
CA 95134
·
408-943-2600
Document #: 38-05408 Rev. *A
Revised September 11, 2003
Features
· Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns
· Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
· CMOS for optimum speed/power
· TTLcompatible Inputs and Outputs
· Available in 28 DIP, 28 SOJ, and 28 TSOP I.
· 2.0V Data Retention
· Low CMOS standby power
· Automated Powerdown when deselected
General Description
1
The CY7C199C is a highperformance CMOS Asynchronous
SRAM organized as 32K by 8 bits that supports an
asynchronous memory interface. The device features an
automatic powerdown feature that significantly reduces
power consumption when deselected.
See the Truth Table in this datasheet for a complete
description of read and write modes.
The CY7C199C is available in 28 DIP, 28 SOJ, and 28 TSOP
I package(s).
Product Portfolio
Notes:
1. For bestpractices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
12 ns
15 ns
20 ns
25 ns
Unit
Maximum Access Time
12
15
20
25
ns
Maximum Operating Current
85
80
75
75
mA
Maximum CMOS Standby Current
(low power)
500
500
500
500
uA
Row D
e
code
r
RAM Array
Column Decoder
Input Buffer
S
ense
A
m
ps
A
X
Power
Down
Circuit
I/Ox
OE
WE
CE
X
Logic Block Diagram
CY7C199C
Document #: 38-05408 Rev. *A
Page 2 of 12
Pin Layout and Specifications
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
V
SS
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
A
0
OE
A
1
A
2
A
3
A
4
WE
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
28 DIP (6.9 x 35.6 x 3.5 mm) P21
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
V
SS
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
A
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
28 TSOP I (8 x 13.4 x 1.2 mm) Z28
CY7C199C
Document #: 38-05408 Rev. *A
Page 3 of 12
Pin Layout and Specifications
(continued)
Truth Table
Pin Description
Pin
Type
Description
DIP
SOJ
TSOP I
A
X
Input
Address Inputs.
1, 2, 3, 4, 5, 6, 7,
8, 9, 10, 21, 23,
24, 25, 26
1, 2, 3, 4, 5, 6, 7,
8, 9, 10, 21, 23,
24, 25, 26
2, 3, 4, 5, 8, 9,
10, 11, 12, 13,
14, 15, 16, 17,
28
CE
Control
Chip Enable.
20
20
27
I/O
X
Input or
Output
Data Input/Outputs.
11, 12, 13, 15,
16, 17, 18, 19
11, 12, 13, 15,
16, 17, 18, 19
18, 19, 20, 22,
23, 24, 25, 26
OE
Control
Output Enable.
22
22
1
V
CC
Supply
Power (5.0V).
28
28
7
V
SS
Supply
Ground.
14
14
21
WE
Control
Write Enable.
27
27
6
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
V
SS
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
CE
A
0
OE
A
1
A
2
A
3
A
4
WE
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
28 SOJ (8 x 18 x 3.5 mm) V21
CE
OE
WE
I/Ox
Mode
Power
H
X
X
High Z
Deselect / Power-Down
Standby (I
SB
)
L
L
H
Data Out
Read
Active (I
CC
)
L
X
L
Data In
Write
Active (I
CC
)
L
H
H
High Z
Selected, outputs disabled
Active (I
CC
)
CY7C199C
Document #: 38-05408 Rev. *A
Page 4 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Operating Range
DC Electrical Characteristics
Over the Operating Range (12, 15)
2
DC Electrical Characteristics
Over the Operating Range (20, 25)
3
Parameter
Description
Value
Unit
T
STG
Storage Temperature
65 to +150
°C
T
AMB
Ambient Temperature with Power Applied (i.e. case temperature)
55 to +125
°C
V
CC
Core Supply Voltage Relative to V
SS
0.5 to +7.0
V
V
IN
, V
OUT
DC Voltage Applied to any Pin Relative to V
SS
0.5 to V
CC
+ 0.5
V
I
OUT
Output ShortCircuit Current
20
mA
V
ESD
Static Discharge Voltage (per MILSTD883, Method 3015)
> 2001
V
I
LU
Latchup Current
> 200
mA
Range
Ambient Temperature (T
A
)
Voltage Range (V
CC
)
Commercial
0°C to 70°C
5.0V ± 10%
Industrial
40°C to 85°C
5.0V ± 10%
Parameter
Description
Condition
Power
12 ns
15 ns
Unit
Min.
Max.
Min.
Max.
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.3
2.2
V
CC
+ 0.3
V
V
IL
Input LOW Voltage
0.5
0.8
0.5
0.8
V
V
OH
Output HIGH Voltage V
CC
= Min., I
OH
= 4.0 mA
2.4
2.4
V
V
OL
Output LOW Voltage V
CC
= Min., I
OL
= 8.0 mA
0.4
0.4
V
I
CC
V
CC
Operating
Supply Current
V
CC
= Max., I
OUT
= 0 mA, f = F
MAX
=
1/t
RC
85
80
mA
I
SB1
Automatic CE
Powerdown
Current TTL Inputs
Max. V
CC
, CE
V
IH
, V
IN
V
IH
or V
IN
V
IL
, f = F
MAX
30
30
mA
L
10
10
mA
I
SB2
Automatic CE
Powerdown
Current CMOS
Inputs
Max. V
CC
, CE
V
CC
0.3V, V
IN
V
CC
0.3V, or V
IN
0.3V, f = 0
10
10
mA
L
500
500
uA
I
OZ
Output Leakage
Current
GND
Vi
V
CC
, Output Disabled
5
+5
5
+5
uA
I
IX
Input Load Current
GND
Vi
V
CC
5
+5
5
+5
uA
Notes:
2. V
IL
(min) = 2.0V for pulse durations of less than 20 ns.
Parameter
Description
Condition
Power
20 ns
25 ns
Unit
Min
Max
Min
Max
V
IH
Input HIGH Voltage
2.2
V
CC
+
0.3
2.2
V
CC
+
0.3
V
V
IL
Input LOW Voltage
0.5
0.8
0.5
0.8
V
V
OH
Output HIGH Voltage V
CC
= Min., I
OH
= 4.0 mA
2.4
2.4
V
V
OL
Output LOW Voltage V
CC
= Min., I
OL
= 8.0 mA
0.4
0.4
V
3.V
IL
(min) = 2.0V for pulse durations of less than 20 ns.
CY7C199C
Document #: 38-05408 Rev. *A
Page 5 of 12
Capacitance
4
AC Test Loads
I
CC
V
CC
Operating
Supply Current
V
CC
= Max., I
OUT
= 0 mA, f = F
MAX
=
1/t
RC
75
75
mA
I
SB1
Automatic CE
Powerdown
Current TTL Inputs
Max. V
CC
, CE
V
IH
, V
IN
V
IH
or V
IN
V
IL
, f = F
MAX
30
30
mA
L
10
10
mA
I
SB2
Automatic CE
Powerdown
Current CMOS
Inputs
Max. V
CC
, CE
V
CC
0.3V, V
IN
V
CC
0.3V, or V
IN
0.3V, f = 0
10
10
mA
L
500
500
uA
I
OZ
Output Leakage
Current
GND
Vi
V
CC
, Output Disabled
5
+5
5
+5
uA
I
IX
Input Load Current
GND
Vi
V
CC
5
+5
5
+5
uA
Parameter
Description
Conditions
Max
Unit
ALL PACKAGES
C
IN
Input Capacitance
T
A
= 25C, f = 1 MHz,
V
CC
= 5.0V
8
pF
C
OUT
Output Capacitance
8
Notes:
4. Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Condition
Power
20 ns
25 ns
Unit
Min
Max
Min
Max
V
CC
V
SS
Rise Time
1 V/ns
Fall Time
1 V/ns
All Input Pulses
90%
10%
90%
10%
V
Output
R1
R2
C1
CC
V
Output
R3
C2
CC
R4
Output Loads
Output Loads
for t
HZOE
, t
HZCE
& t
HZWE
* including scope and jig capacitance
(B)*
(A)*
R
th
T
V
Thevenin Equivalent
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