MMBTA42, MMBTA43
Features
This device is designed for application as a
video output to drive color CRT and other
high voltage applications
High Voltage Transistors
www.comchiptech.com
COMCHIP
COMCHIP
MDS0605002A
Page 1
NPN Silicon Type
SOT-23
Dimensions in inches (millimeters)
.037(0.95) .037(0.95)
.00
6
(
0.
1
5
)
max.
.1
19
(3.
0
)
.0
20
(0.
5
)
.0
20
(0.
5
)
Top View
.10
3
(2.6)
.00
6
(
0
.15)
.
0
4
4
(
1
.1
0
)
.110 (2.8)
.0
47
(
1
.
2
0
)
.00
2
(
0
.
0
5)
.0
86
(2.
2
)
.
0
3
5
(
0
.9
0
)
.0
20
(0.
5
)
.056
(
1
.4
0)
3
1
2
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
MMBTA42
MMBTA43
Unit
Collector - Emitter Voltage
V
CEO
300
200
Vdc
Collector - Base Voltage
V
CBO
300
200
Vdc
Emitter - Base Voltage
V
EBO
6.0
6.0
Vdc
Collector Current-Continuous
I
C
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board (Note 1)
T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction-to-Ambient
R
q
JA
556
°
C/W
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction-to-Ambient
R
q
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
-55 to
+150
°
C
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MDS0605002A
Page 2
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (Note 3)
(I
C
= 1.0 mAdc, I
B
= 0)
MMBTA42
MMBTA43
V
(BR)CEO
300
200
-
-
Vdc
Collector - Base Breakdown Voltage
(I
C
= 100
m
Adc, I
E
= 0)
MMBTA42
MMBTA43
V
(BR)CBO
300
200
-
-
Vdc
Emitter - Base Breakdown Voltage
(I
E
= 100
m
Adc, I
C
= 0)
V
(BR)EBO
6.0
-
Vdc
Collector Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0)
MMBTA42
(V
CB
= 160 Vdc, I
E
= 0)
MMBTA43
I
CBO
-
-
0.1
0.1
m
Adc
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0)
MMBTA42
(V
EB
= 4.0 Vdc, I
C
= 0)
MMBTA43
I
EBO
-
-
0.1
0.1
m
Adc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
Both Types
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
Both Types
(I
C
= 30 mAdc, V
CE
= 10 Vdc)
MMBTA42
MMBTA43
h
FE
25
40
40
40
-
-
-
-
-
Collector - Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
MMBTA42
MMBTA43
V
CE(sat)
-
-
0.5
0.5
Vdc
Base-Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
V
BE(sat)
-
0.9
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
50
-
MHz
Collector-Base Capacitance
(V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz)
MMBTA42
MMBTA43
C
cb
-
-
3.0
4.0
pF
3. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
High Voltage Transistors
www.comchiptech.com
COMCHIP
COMCHIP
ELECTRICAL CHARACTERISTICS (T
A
= 25
O
C unless otherwise noted)
High Voltage Transistors
www.comchiptech.com
COMCHIP
COMCHIP
MDS0605002A
Page 3
C, CAP
ACIT
ANCE (pF)
Figure 1. DC Current Gain
V
R
, REVERSE VOLTAGE (VOLTS)
0.1
100
0.1
10
1.0
10
1000
C
eb
@ 1MHz
Figure 2. Capacitance
I
C
, COLLECTOR CURRENT (mA)
100
70
50
30
20
10
7.0
5.0
3.0
2.0
80
70
50
30
20
10
T
J
= 25
°
C
V
CE
= 20 V
f = 20 MHz
f, CURRENT-GAIN BANDWIDTH (MHz) T
1.0
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Current-Gain - Bandwidth
V
, VOL
T
AGE (VOL
TS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100
10
0.1
1.0
100
1.0
C
cb
@ 1MHz
60
40
V
BE(on)
@ 25
°
C, V
CE
= 10 V
V
CE(sat)
@ 25
°
C, I
C
/I
B
= 10
V
BE(sat)
@ 25
°
C, I
C
/I
B
= 10
V
CE(sat)
@ 125
°
C, I
C
/I
B
= 10
V
CE(sat)
@ -55
°
C, I
C
/I
B
= 10
V
BE(sat)
@ 125
°
C, I
C
/I
B
= 10
V
BE(sat)
@ -55
°
C, I
C
/I
B
= 10
V
BE(on)
@ 125
°
C, V
CE
= 10 V
V
BE(on)
@ -55
°
C, V
CE
= 10 V
Figure 4. "ON" Voltages
I
C
, COLLECTOR CURRENT (mA)
120
0.1
1.0
10
100
80
60
0
h FE
, DC CURRENT
GAIN
T
J
= +125
°
C
25
°
C
-55
°
C
V
CE
= 10 Vdc
100
20
40
Rating and Characteristic Curves (MMBTA42, MMBTA43)
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