DESCRIPTION:
The CENTRAL SEMICONDUCTOR MMPQ6502,
consisting of two complementary pairs of
transistors, available in the SOIC-16 surface
mount package, is designed for general purpose
amplifier and switching applications.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
1.0
A
Power Dissipation
PD
1000
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-55 to +150
°C
Thermal Resistance (Total Package)
JA
125
°C/W
Thermal Resistance (Each Transistor)
JA
240
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=50V
30
nA
IEBO
VBE=3.0V
30
nA
BVCBO
IC=10µA
60
V
BVCEO
IC=10mA
30
V
BVEBO
IE=10µA
5.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.4
V
VCE(SAT)
IC=300mA, IB=30mA
1.4
V
VBE(SAT)
IC=150mA, IB=15mA
1.3
V
VBE(SAT)
IC=300mA, IB=30 mA
2.0
V
hFE
VCE=10V, IC=1.0mA
50
hFE
VCE=10V, IC=10mA
75
hFE
VCE=10V, IC=150mA
100
hFE
VCE=10V, IC=300mA
30
fT
VCE=20V, IC=50mA, f=100MHz
200
MHz
Cib
VBE=2.0V, f=1.0MHz
30
pF
Cob
VCB=10V, f=1.0MHz
8.0
pF
MMPQ6502
SURFACE MOUNT
COMPLEMENTARY
SILICON QUAD TRANSISTOR
SOIC-16 CASE
Central
Semiconductor Corp.
TM
R0 ( 7-November 2001)
PDF 
ZIP