DESCRIPTION:
The CENTRAL SEMICONDUCTOR MMPQ3906,
consisting of four transistors and available in the
SOIC-16 surface mount package, is designed for
general purpose amplifier and switching applications.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
200
mA
Power Dissipation
PD
1000
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-55 to +150
°C
Thermal Resistance (Total Package)
JA
125
°C/W
Thermal Resistance (Each Transistor)
JA
240
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICEV
VCE=30V, VEB=3.0V
50
nA
BVCBO
IC=10µA
40
V
BVCEO
IC=1.0mA
40
V
BVEBO
IE=10µA
5.0
V
VCE(SAT) IC=10mA, IB=1.0mA
0.25
V
VCE(SAT) IC=50mA, IB=5.0mA
0.40
V
VBE(SAT) IC=10mA, IB=1.0mA
0.65
0.85
V
VBE(SAT) IC=50mA, IB=5.0mA
0.95
V
hFE
VCE=1.0V, IC=0.1mA
60
hFE
VCE=1.0V, IC=1.0mA
80
hFE
VCE=1.0V, IC=10mA
100
300
hFE
VCE=1.0V, IC=50mA
60
hFE
VCE=1.0V, IC=100mA
30
fT
VCE=20V, IC=10mA, f=100MHz
450
MHz
Cib
VEB=0.5V, f=100kHz
8.0
pF
Cob
VCB=5.0V, f=100kHz
3.0
pF
NF
VCE=5.0V, IC=100µA, RS=1.0k
, f=10Hz to 15.7kHz
2.5
dB
td
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
15
ns
tr
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
20
ns
ts
VCC=3.0V, IC=10mA, IB1= IB2=1.0mA
110
ns
tf
VCC=3.0V, IC=10mA, IB1= IB2=1.0mA
40
ns
MMPQ3906
SURFACE MOUNT
PNP SILICON
QUAD TRANSISTOR
SOIC-16 CASE
Central
Semiconductor Corp.
TM
R0 ( 7-November 2001)
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