MAXIMUM RATINGS: (TA=25°C)
SYMBOL
CZTA42
CZTA92
UNITS
Collector-Base Voltage
VCBO
300
300
V
Collector-Emitter Voltage
VCEO
300
300
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Continuous Collector Current
IC
500
mA
Power Dissipation
PD
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
°C
Thermal Resistance
JA
62.5
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CZTA42
CZTA92
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
ICBO
VCB=200V
100
250
nA
IEBO
VBE=6.0V
100
-
nA
IEBO
VBE=3.0V
-
100
nA
BVCBO
IC=100µA
300
300
V
BVCEO
IC=1.0mA
300
300
V
BVEBO
IE=100µA
6.0
5.0
V
VCE(SAT)
IC=20mA, IB=2.0mA
0.5
0.5
V
VBE(SAT)
IC=20mA, IB=2.0mA
0.9
0.9
V
hFE
VCE=10V, IC=1.0mA
25
25
hFE
VCE=10V, IC=10mA
40
40
hFE
VCE=10V, IC=30mA
40
25
fT
VCE=20V, IC=10mA, f=100MHz
50
50
MHz
Cob
VCB=20V, IE=0, f=1.0MHz
3.0
6.0
pF
CZTA42 NPN
CZTA92 PNP
SURFACE MOUNT
COMPLEMENTARY
HIGH VOLTAGE SILICON TRANSISTOR
SOT-223 CASE
Central
Semiconductor Corp.
TM
R2 (17-June 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZTA42,
CZTA92 types are complementary surface
mount epoxy molded silicon planar epitaxial
transistors designed for high voltage
applications.
MARKING CODE: FULL PART NUMBER
MIN
MAX
MIN
MAX
A
0°
10°
0°
10°
B
0.059
0.071
1.50
1.80
C
0.018
---
0.45
---
D
0.000
0.004
0.00
0.10
E
F
0.009
0.014
0.23
0.35
G
0.248
0.264
6.30
6.70
H
0.114
0.122
2.90
3.10
I
0.130
0.146
3.30
3.70
J
0.264
0.287
6.70
7.30
K
0.024
0.033
0.60
0.85
L
M
SOT-223 (REV: R3)
15°
0.091
0.181
4.60
2.30
15°
DIMENSIONS
SYMBOL
MILLIMETERS
INCHES
Central
Semiconductor Corp.
TM
SOT-223 CASE - MECHANICAL OUTLINE
CZTA42 NPN
CZTA92 PNP
SURFACE MOUNT
COMPLEMENTARY
HIGH VOLTAGE SILICON TRANSISTOR
R2 (17-June 2004)
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
MARKING CODE:
FULL PART NUMBER
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