316
Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
CZT5551
NPN SILICON TRANSISTOR
SOT-223 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551
type is an NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded
in a surface mount package, designed for high
voltage amplifier applications.
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
62.5
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX UNITS
ICBO
VCB=120V
50
nA
ICBO
VCB=120V, TA=100
o
C
50
µ
A
IEBO
VEB=4.0V
50
nA
BVCBO
IC=100
µ
A
180
V
BVCEO
IC=1.0mA
160
V
BVEBO
IE=10
µ
A
6.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.15
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.20
V
VBE(SAT)
IC=10mA, IB=1.0mA
1.00
V
VBE(SAT)
IC=50mA, IB=5.0mA
1.00
V
hFE
VCE=5.0V, IC=1.0mA
80
hFE
VCE=5.0V, IC=10mA
80
250
hFE
VCE=5.0V, IC=50mA
30
R2
317
SYMBOL
TEST CONDITIONS
MIN
MAX UNITS
fT
VCE=10V, IC=10mA, f=100MHz
100
300
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
20
pF
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
200
NF
VCE=5.0V, IC=200
µ
A, RS=10
f=10Hz to 15.7kHz
8.0
dB
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
3) COLLECTOR
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