310
Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
CZT4033
PNP SILICON TRANSISTOR
SOT-223 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CZT4033 type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high current general purpose
amplifier applications.
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
1.0
A
Collector Current (Peak)
ICM
1.5
A
Power Dissipation
PD
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
62.5
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=60V
50
nA
IEBO
VEB=5.0V
10
nA
BVCBO
IC=10
µ
A
80
V
BVCEO
IC=10mA
80
V
BVEBO
IE=10
µ
A
5.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.15
V
VCE(SAT)
IC=500mA, IB=50mA
0.50
V
VBE(SAT)
IC=150mA, IB=15mA
0.90
V
VBE(SAT)
IC=500mA, IB=50mA
1.10
V
hFE
VCE=5.0V, IC=0.1mA
75
hFE
VCE=5.0V, IC=100mA
100
300
hFE
VCE=5.0V, IC=500mA
70
hFE
VCE=5.0V, IC=1.0A
25
fT
VCE=10V, IC=50mA, f=1.0MHz
100
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
20
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
110
pF
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