Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
294
CZT31C NPN
CZT32C PNP
2.0W COMPLEMENTARY SILICON
POWER TRANSISTOR
SOT-223 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT31C
and CZT32C types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designed for surface mounted power amplifier
applications up to 3.0 amps.
MAXIMUM RATINGS: (TA=25
o
C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
3.0
A
Peak Collector Current
ICM
6.0
A
Base Current
IB
1.0
A
Power Dissipation
PD
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
62.5
o
C/W
ELECTRICAL CHARACTERISTICS: (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICES
VCE=100V
200
µ
A
ICEO
VCE=60V
300
µ
A
IEBO
VEB=5.0V
1.0
mA
BVCEO
IC=30mA
100
V
* VCE(SAT)
IC=3.0A, IB=375mA
1.2
V
* VBE(ON)
VCE=4.0V, IC=3.0A
1.8
V
* hFE
VCE=4.0V, IC=1.0A
25
* hFE
VCE=4.0V, IC=3.0A
10
100
fT
VCE=10V, IC=500mA, f=1.0MHz
3.0
MHz
* Pulsed, 2%D.C.
NEW
TM
223
POWER
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