302
Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
SOT-223 CASE
CZT2907A
PNP SILICON TRANSISTOR
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
62.5
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=50V
10
nA
ICBO
VCB=50V, TA=125
o
C
10
µ
A
ICEV
VCE=30V, VBE=0.5V
50
nA
BVCBO
IC=10
µ
A
60
V
BVCEO
IC=10mA
60
V
BVEBO
IE=10
µ
A
5.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.4
V
VCE(SAT)
IC=500mA, IB=50mA
1.6
V
VBE(SAT)
IC=150mA, IB=15mA
1.3
V
VBE(SAT)
IC=500mA, IB=50mA
2.6
V
hFE
VCE=10V, IC=0.1mA
75
hFE
VCE=10V, IC=1.0mA
100
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CZT2907A type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for general purpose amplifier and
switching applications.
R2
303
SYMBOL
TEST CONDITIONS
MIN MAX UNITS
hFE
VCE=10V, IC=10mA
100
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
50
fT
VCE=20V, IC=50mA, f=100MHz
200
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
8.0 pF
Cib
VBE=2.0V, IC=0, f=1.0MHz
30
pF
ton
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
45
ns
td
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
10
ns
tr
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
40
ns
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
100
ns
ts
VCC=6.0V, IC=150mA, IB1=IB2=15mA
80
ns
tf
VCC=6.0V, IC=150mA, IB1=IB2=15mA
30
ns
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
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