MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
5.0
A
Peak Collector Current
ICM
8.0
A
Base Current
IB
120
mA
Power Dissipation
PD
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
°C
Thermal Resistance
JA
62.5
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICEO
VCE=50V
500
µA
ICBO
VCB=100V
200
µA
IEBO
VEB=5.0V
2.0
mA
BVCEO
IC=30mA
100
V
VCE(SAT)
IC=3.0A, IB=12mA
2.0
V
VCE(SAT)
IC=5.0A, IB=20mA
4.0
V
VBE(ON)
VCE=3.0V, IC=3.0A
2.5
V
hFE
VCE=3.0V, IC=500mA
1000
hFE
VCE=3.0V, IC=3.0A
1000
fT
VCE=4.0V, IC=3.0A, f=1.0MHz
4.0
MHz
Cob
VCB=10V, IE=0, f=1.0MHz (CZT122)
200
pF
Cob
VCB=10V, IE=0, f=1.0MHz (CZT127)
300
pF
CZT122 NPN
CZT127 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTOR
SOT-223 CASE
Central
Semiconductor Corp.
TM
R3 (17-June 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT122,
CZT127 types are Complementary Silicon
Power Darlington Transistors manufactured in a
surface mount package designed for low speed
switching and amplifier applications.
MARKING CODE: FULL PART NUMBER
MIN
MAX
MIN
MAX
A
0°
10°
0°
10°
B
0.059
0.071
1.50
1.80
C
0.018
---
0.45
---
D
0.000
0.004
0.00
0.10
E
F
0.009
0.014
0.23
0.35
G
0.248
0.264
6.30
6.70
H
0.114
0.122
2.90
3.10
I
0.130
0.146
3.30
3.70
J
0.264
0.287
6.70
7.30
K
0.024
0.033
0.60
0.85
L
M
SOT-223 (REV: R3)
15°
0.091
0.181
4.60
2.30
15°
DIMENSIONS
SYMBOL
MILLIMETERS
INCHES
Central
Semiconductor Corp.
TM
SOT-223 CASE - MECHANICAL OUTLINE
CZT122 NPN
CZT127 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTOR
R3 (17-June 2004)
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
MARKING CODE:
FULL PART NUMBER
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