MAXIMUM RATINGS (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
500
mA
Power Dissipation
PD
1.2
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
°C
Thermal Resistance
JA
104
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=30V
100
nA
IEBO
VEB=10V
100
nA
BVCES
IC=100µA
30
V
VCE(SAT)
IC=100mA, IB=0.1mA
1.5
V
VBE(ON)
VCE=5.0V, IC=100mA
2.0
V
hFE
VCE=5.0V, IC=10mA
10,000
hFE
VCE=5.0V, IC=100mA
20,000
fT
VCE=5.0V, IC=10mA, f=100MHz
125
MHz
CXTA14 NPN
CXTA64 PNP
SURFACE MOUNT
SILICON COMPLEMENTARY
DARLINGTON TRANSISTORS
SOT-89 CASE
Central
Semiconductor Corp.
TM
R5 (20-May 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXTA14,
CXTA64 types are complementary silicon
Darlington transistors manufactured by the
epitaxial planar process, epoxy molded in a
surface mount package, designed for
applications requiring extremely high gain.
MARKING CODE: FULL PART NUMBER
MIN
MAX
MIN
MAX
A
0.055 0.067
1.40
1.70
B
C
0.014 0.018
0.35
0.46
D
0.173 0.185
4.40
4.70
E
0.064 0.074
1.62
1.87
F
0.146 0.177
3.70
4.50
G
0.090 0.106
2.29
2.70
H
0.028 0.051
0.70
1.30
J
0.014 0.019
0.36
0.48
K
0.017 0.023
0.44
0.58
L
M
SOT-89 (REV: R4)
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
4° 4°
0.059
0.118
1.50
3.00
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXTA14 NPN
CXTA64 PNP
SURFACE MOUNT
SILICON COMPLEMENTARY
DARLINGTON TRANSISTORS
R5 (20-May 2004)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING CODE:
FULL PART NUMBER
BOTTOM VIEW
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