MAXIMUM RATINGS (TA=25°C)
SYMBOL
CXT3904
CXT3906
UNITS
Collector-Base Voltage
VCBO
60
40
V
Collector-Emitter Voltage
VCEO
40
40
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Collector Current
IC
200
mA
Power Dissipation
PD
1.2
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
°C
Thermal Resistance
JA
104
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
CXT3904
CXT3906
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
ICEV
VCE=30V, VEB=3.0V
50
50
nA
IBL
VCE=30V, VEB=3.0V
50
50
nA
BVCBO
IC=10µA
60
40
V
BVCEO
IC=1.0mA
40
40
V
BVEBO
IE=10µA
6.0
5.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.20
0.25
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.30
0.40
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.65
0.85
0.65
0.85
V
VBE(SAT)
IC=50mA, IB=5.0mA
0.95
0.95
V
hFE
VCE=1.0V, IC=0.1mA
40
60
hFE
VCE=1.0V, IC=1.0mA
70
80
hFE
VCE=1.0V, IC=10mA
100
300
100
300
hFE
VCE=1.0V, IC=50mA
60
60
CXT3904 NPN
CXT3906 PNP
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
SOT-89 CASE
Central
Semiconductor Corp.
TM
R6 (20-May 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT3904,
CXT3906 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for small signal general
purpose and switching applications.
MARKING CODE: FULL PART NUMBER
MIN
MAX
MIN
MAX
A
0.055 0.067
1.40
1.70
B
C
0.014 0.018
0.35
0.46
D
0.173 0.185
4.40
4.70
E
0.064 0.074
1.62
1.87
F
0.146 0.177
3.70
4.50
G
0.090 0.106
2.29
2.70
H
0.028 0.051
0.70
1.30
J
0.014 0.019
0.36
0.48
K
0.017 0.023
0.44
0.58
L
M
SOT-89 (REV: R4)
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
4° 4°
0.059
0.118
1.50
3.00
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXT3904 NPN
CXT3906 PNP
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
R6 (20-May 2004)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
CXT3904
CXT3906
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
hFE
VCE=1.0V, IC=100mA
30
30
fT
VCE=20V, IC=10mA, f=100MHz
300
250
MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
4.5
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
8.0
10
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
10
2.0
12
k
hre
VCE=10V, IC=1.0mA, f=1.0kHz
0.5
8.0
0.1
10
x10-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
100
400
100
400
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
40
3.0
60
mmhos
NF
VCE=5.0V, IC=100µA, RS=1.0k
f=10Hz to 15.7kHz
5.0
4.0
dB
td
VCC=3.0V, VBE=0.5, IC=10mA, IB1=1.0mA
35
35
ns
tr
VCC=3.0V, VBE=0.5, IC=10mA, IB1=1.0mA
35
35
ns
ts
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
200
225
ns
tf
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
50
75
ns
BOTTOM VIEW
MARKING CODE: FULL PART NUMBER
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