(SEE REVERSE SIDE)
R0
CT-32
DIAC
DO-35 CASE
DATA SHEET
DESCRIPTION
The Central Semiconductor CT-32 Diac functions as a trigger diode with a fixed voltage reference and low
breakover current. This device is manufactured in a hermetically sealed glass package to ensure high reliability.
MAXIMUM RATINGS (TA=25°C)
SYMBOL
UNITS
Repetitive Peak On-state Current
ITRM
2.0
A
tp=20µs, f=120Hz
Operating and Storage
Junction
Temperature
TJ,Tstg
-40 to +125
°C
ELECTRICAL CHARACTERISTICS (TA=25°C)
SYMBOL TEST
CONDITIONS
MIN
MAX UNITS
VBO*
C=22nF**
28
36
V
| VBO1 VBO2 |
C=22nF**
3.0
V
V
VBO & VF @
10mA
5.0
V
VO
See
Figure
2
5.0
V
IBO
C=22nF**
50
µA
IR
VR = 18V
10
µA
IP
See Figure 2
0.3
A
tr
See Figure 3
2.0
µs
* Both directions.
**Capacitor connected in parallel with device.
CT-32
DIAC
Figure 2. Test circuit.
Figure 1. Voltage Current characteristic curve.
Figure
2.
Test
circuit.
Figure 3. Rise time measurement.
DO-35 PACKAGE - MECHANICAL OUTLINE
R1
A
C
B
D
D
MIN
MAX
MIN
MAX
A
0.018
0.022
0.46
0.56
B
0.120
0.200
3.05
5.08
C
0.060
0.090
1.52
2.29
D
1.000
-
25.40
-
DO-35 (REV: R1)
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
I
p
90%
10%
t
r
I
B
I
BO
10mA
-I
F
+I
F
-V
+V
0.5V
BO
V
V
BO
V
F
CQ202-4D
IP
10K
0.1µF
D.U.T.
20
Vo
110V
60Hz
200K
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