PROCESS
CPD83V
Switching Diode
High Speed Switching Diode Chip
PRINCIPAL DEVICE TYPES
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
CMPD2838
CMPD7000
Process
EPITAXIAL PLANAR
Die Size
11 x 11 MILS
Die Thickness
7.1 MILS
Anode Bonding pad Area
3.3 x 3.3 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au.As - 13,000Å
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GEOMETRY
BACKSIDE CATHODE
R1 (25- April 2005)
GROSS DIE PER 4 INCH WAFER
94,130
Central
Semiconductor Corp.
TM
Central
Semiconductor Corp.
TM
PROCESS
CPD83V
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (25- April 2005)
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ZIP