PROCESS
CPD48V
Schottky Diode
High Current Schottky Diode Chip
PRINCIPAL DEVICE TYPES
CMPSH-3 Series
CMSSH-3 Series
CMXSH-3
CMKSH-3T
Process
EPITAXIAL PLANAR
Die Size
14 x 14 MILS
Die Thickness
7.1 MILS
Anode Bonding Pad Area
9.0 x 9.0 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 12,000Å
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
BACKSIDE CATHODE
GEOMETRY
R0 (13- February 2006)
GROSS DIE PER 4 INCH WAFER
62,250
PROCESS
CPD48V
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R0 (13- February 2006)
PDF 
ZIP