Central
Semiconductor Corp.
TM
PROCESS
CP176
Power Transistor
NPN - Amp/Switch Transistor Chip
PRINCIPAL DEVICE TYPES
MJ15003
Process
MULTI EPITAXIAL PLANAR
Die Size
203 x 227 MILS
Die Thickness
12.5 ± 1.0 MILS
Base Bonding Pad Area
38 x 76 MILS
Emitter Bonding Pad Area
47 x 72 MILS
Top Side Metalization
Al - 50,000Å
Back Side Metalization
Ag - 10,000Å
PROCESS DETAILS
R2 (1 -August 2002)
GEOMETRY
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GROSS DIE PER 4 INCH WAFER
240
Central
Semiconductor Corp.
TM
Central
Semiconductor Corp.
TM
PROCESS
CP176
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1 -August 2002)
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