MAXIMUM RATINGS: (TA=25
o
C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
70
V
Continuous Forward Current
IF
70
mA
Forward Surge Current, tp=1.0 s
IFSM
100
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
500
o
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25
o
C)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR=50V
10
100
nA
BVR
IR=10A
70
V
VF
IF=100A
290
320
mV
VF
IF=500A
345
380
mV
VF
IF=1.0mA
380
400
mV
VF
IF=10mA
700
750
mV
VF
IF=15mA
830
900
mV
CT
VR=0V, f=1.0MHz
2.0
pF
trr
IR=IF=10mA, Irr=1mA, RL=100
5.0
ns
CMUD6263E
CMUD6263AE
CMUD6263CE
CMUD6263SE
ENHANCED SPECIFICATION
SURFACE MOUNT ULTRAminiTM
SILICON SCHOTTKY DIODES
SOT-523 CASE
Central
Semiconductor Corp.
TM
R1 (22-March 2006)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUD6263E
Series types are Enhanced High Voltage Silicon
Schottky diodes, epoxy molded in an ULTRAminiTM
SOT-523 surface mount package, designed for low
current fast switching applications requiring a low
forward voltage drop.
ENHANCED SPECIFICATIONS:
IF = 70mA (from 15mA)
IFSM = 100mA (from 50mA)
MARKING CODE:
CMUD6263E
SINGLE
C63
CMUD6263AE DUAL, COMMON ANODE
C6A
CMUD6263CE DUAL, COMMON CATHODE
C6C
CMUD6263SE DUAL, IN SERIES
C6S
Enhanced specification.
Additional Enhanced specification.
Central
Semiconductor Corp.
TM
CMUD6263E
CMUD6263AE
CMUD6263CE
CMUD6263SE
ENHANCED SPECIFICATION
SURFACE MOUNT ULTRAminiTM
SILICON SCHOTTKY DIODES
R1 (22-March 2006)
CMUD6263E
1) Anode
2) No Connection
3) Cathode
MARKING CODE:
C63
CMUD6263AE
1) Cathode D1
2) Cathode D2
3) Anode D1, D2
MARKING CODE:
C6A
CMUD6263CE
1) Anode D1
2) Anode D2
3) Cathode D1, D2
MARKING CODE:
C6C
CMUD6263SE
1) Anode D1
2) Cathode D2
3) Anode D2, Cathode D1
MARKING CODE:
C6S
SOT-523 CASE - MECHANICAL OUTLINE
PIN CONFIGURATIONS
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