Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
160
SOT-23 CASE
CMPT2369
NPN SILICON TRANSISTOR
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCES
40
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
4.5
V
Collector Current
IC
500
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX UNITS
ICBO
VCB=20V
0.4
µ
A
ICBO
VCB=20V, TA=125
o
C
30
µ
A
BVCBO
IC=10
µ
A
40
V
BVCES
IC=10
µ
A
40
V
BVCEO
IC=10mA
15
V
BVEBO
IE=10
µ
A
4.5
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.25
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.7
0.85
V
hFE
VCE=1.0V, IC=10mA
40
120
hFE
VCE=2.0V, IC=100mA
20
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
pF
fT
VCE=10V, IC=10mA, f=100MHz
500
MHz
ts
VCC=3.0V, IC=IB1=IB2=10mA
13
ns
ton
VCC=3.0V, IC=10mA, IB1=3.0mA
12
ns
toff
VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA
18
ns
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT2369 type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for ultra high speed switching
applications.
Marking Code is C1J.
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