MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
200
mA
Peak Repetitive Forward Current
IFRM
350
mA
Forward Surge Current, tp=10ms
IFSM
750
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
JA
500
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVR
IR=100µA
40
50
V
VF
IF=2.0mA
0.29
0.33
V
VF
IF=15mA
0.37
0.42
V
VF
IF=100mA
0.61
0.80
V
VF
IF=200mA
0.65
1.0
V
IR
VR=25V
90
500
nA
IR
VR=25V, TA=100°C
25
100
µA
CT
VR=1.0V, f=1.0 MHz
7.0
pF
trr
IF=IR=10mA, Irr=1.0mA, RL=100
5.0
ns
CMLSH-4DO
SURFACE MOUNT PICOmini
TM
DUAL ISOLATED
OPPOSING SILICON
SCHOTTKY DIODES
SOT-563 CASE
Central
Semiconductor Corp.
TM
R2 (28-May 2003)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLSH-4DO
are two individual electrically isolated 40 volt
Schottky Diodes of opposing polarity, in a space
saving SOT-563 surface mount package. This
PICOminiTM device has been designed for
applications requiring fast switching speeds and a
low forward voltage drop.
MARKING CODE: L4O
A
B
C
H
G
F
D
E
E
R0
1
2
3
6
5
4
Central
Semiconductor Corp.
TM
SOT-563 CASE - MECHANICAL OUTLINE
CMLSH-4DO
SURFACE MOUNT PICOmini
TM
DUAL ISOLATED
OPPOSING SILICON
SCHOTTKY DIODES
R2 (28-May 2003)
LEAD CODE:
1) ANODE D1
2) NC
3) CATHODE D2
4) ANODE D2
5) NC
6) CATHODE D1
MARKING CODE: L4O
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