MAXIMUM RATINGS (SOT-563 Package): (TA=25°C)
SYMBOL
UNITS
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
JA
357
°C/W
MAXIMUM RATINGS Q1: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
1.0
A
Collector Current (Peak)
ICM
1.5
A
MAXIMUM RATINGS D1: (TA=25°C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
500
mA
Peak Repetitive Forward Current, tp
1ms
IFRM
3.5
A
Forward Surge Current, tp = 8ms
IFSM
10
A
ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=40V
100
nA
IEBO
VEB=6.0V
100
nA
BVCBO
IC=100µA
40
V
BVCEO
IC=10mA
25
V
BVEBO
IE=100µA
6.0
V
VCE(SAT)
IC=50mA, IB=5.0mA
25
50
mV
VCE(SAT)
IC=100mA, IB=10mA
40
75
mV
VCE(SAT)
IC=200mA, IB=20mA
80
150
mV
VCE(SAT)
IC=500mA, IB=50mA
150
250
mV
VCE(SAT)
IC=800mA, IB=80mA
220
400
mV
VCE(SAT)
IC=1.0A, IB=100mA
275
450
mV
VBE(SAT)
IC=800mA, IB=80mA
1.1
V
VBE(ON)
VCE=1.0V, IC=10mA
0.9
V
CMLM7405
M U L T I D I S C R E T E M O D U L E
TM
SURFACE MOUNT
HIGH CURRENT
LOW VCE (SAT) SILICON PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
SOT-563 CASE
Central
Semiconductor Corp.
TM
R0 (23-March 2005)
DESCRIPTION:
The Central Semiconductor CMLM7405 is a single
PNP Transistor and Schottky Diode packaged in a
space saving SOT-563 case is designed for small
signal general purpose applications where size and
operational efficiency are prime requirements.
· Complementary Device: CMLM3405
· Combination High Current Low VCE (SAT)
Transistor and Low VF Schottky Diode.
MARKING CODES: C57
TM
Central
Semiconductor Corp.
TM
CMLM7405
M U L T I D I S C R E T E M O D U L E
TM
SURFACE MOUNT
HIGH CURRENT
LOW VCE (SAT) SILICON PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
R0 (23-March 2005)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
300
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
15
pF
ELECTRICAL CHARACTERISTICS D1 (TA=25°C)
IR
VR= 10V
20
µA
IR
VR= 30V
100
µA
BVR
IR= 500µA
40
V
VF
IF= 100µA
0.13
V
VF
IF= 1.0mA
0.21
V
VF
IF= 10mA
0.27
V
VF
IF= 100mA
0.35
V
VF
IF= 500mA
0.47
V
CT
VR= 1.0V, f=1.0 MHz
50
pF
A
B
C
H
G
F
D
E
E
R0
1
2
3
6
5
4
SOT-563 - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) CATHODE D1
4) ANODE D1
5) ANODE D1
6) COLLECTOR Q1
MARKING CODE: C57
ELECTRICAL CHARACTERISTICS Q1
(continued)
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