DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDD6001
type is a silicon switching diode manufactured by
the epitaxial planar process, epoxy molded in a
SUPERmini
TM
surface mount package, designed
for switching applications requiring a extremely
low leakage diode.
THE MARKING CODE IS C61.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
75
V
Peak Repetitive Reverse Voltage
VRRM
100
V
Continuous Forward Current
IF
250
mA
Peak Repetitive Forward Current
IFRM
250
mA
Forward Surge Current, tp=1.0 µsec.
IFSM
4000
mA
Forward Surge Current, tp=1.0 sec.
IFSM
1000
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
°C
Thermal Resistance
JA
500
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IR
VR=75V
500
pA
VBR
IR=100µA
100
V
VF
IF=1.0mA
0.85
V
VF
IF=10mA
0.95
V
VF
IF=100mA
1.1
V
CT
VR=0, f=1.0MHz
2.0
pF
trr
IR=IF=10mA, RL=100
, Rec. to 1.0mA
3.0
µs
CMDD6001
SUPERmini
TM
SURFACE MOUNT
LOW LEAKAGE
SWITCHING DIODE
SOD-323 CASE
Central
Semiconductor Corp.
TM
R1 ( 20-July 2001)
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