MAXIMUM RATINGS: (TC=25ºC unless otherwise noted)
SYMBOL
UNITS
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
8.0
A
Peak Collector Current
ICM
16
A
Power Dissipation
PD
20
W
Power Dissipation (TA=25ºC)
PD
1.75
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
ºC
Thermal Resistance
JC
6.25
ºC/W
Thermal Resistance
JA
71.4
ºC/W
ELECTRICAL CHARACTERISTICS: (TC=25ºC unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICES
VCE=80V
10
µA
IEBO
VEB=5.0V
50
µA
BVCEO
IC=30mA
80
V
VCE(SAT)
IC=8.0A, IB=400mA
1.0
V
VBE(SAT)
IC=8.0A, IB=800mA
1.5
V
hFE
VCE=1.0V, IC=2.0A
60
hFE
VCE=1.0V, IC=4.0A
40
fT
VCE=10V, IC=500mA, f=20MHz (CJD44H11)
60
MHz
fT
VCE=10V, IC=500mA, f=20MHz (CJD45H11)
50
MHz
Cob
VCB=10V, IE=0, f=0.1MHz (CJD44H11)
120
pF
Cob
VCB=10V, IE=0, f=0.1MHz (CJD45H11)
220
pF
td + tr
IC=5.0A, IB1=500mA (CJD44H11)
320
ns
td + tr
IC=5.0A, IB1=500mA (CJD45H11)
150
ns
ts
IC=5.0A, IB1=IB2=500mA (CJD44H11, CJD45H11)
450
ns
tf
IC=5.0A, IB1=IB2=500mA (CJD44H11)
130
ns
tf
IC=5.0A, IB1=IB2=500mA (CJD45H11)
100
ns
CJD44H11 NPN
CJD45H11 PNP
COMPLEMENTARY SILICON
POWER TRANSISTOR
DPAK TRANSISTOR CASE
Central
Semiconductor Corp.
TM
R1 (26-September 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD44H11,
CJD45H11 types are Complementary Silicon
Power Transistors manufactured in a surface
mount package designed for switching and power
amplifier applications.
MARKING CODE: FULL PART NUMBER
Central
Semiconductor Corp.
TM
DPAK TRANSISTOR CASE - MECHANICAL OUTLINE
CJD44H11 NPN
CJD45H11 PNP
COMPLEMENTARY SILICON
POWER TRANSISTOR
R1 (26-September 2002)
LEAD CODE:
B) BASE
C) COLLECTOR
E) EMITTER
C) COLLECTOR
MARKING CODE:
FULL PART NUMBER
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