MAXIMUM RATINGS (TA=25°C)
BCX51
BCX52
BCX53
UNITS
Collector-Base Voltage
VCBO
45
60
100
V
Collector-Emitter Voltage
VCEO
45
60
80
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
1.0
A
Peak Collector Current
ICM
1.5
A
Base Current
IB
100
mA
Peak Base Current
IBM
200
mA
Power Dissipation
PD
1.2
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
°C
Thermal Resistance
JA
104
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=30V
100
nA
ICBO
VCB=30V, TA=125°C
10
µA
IEBO
VEB=5.0V
100
nA
BVCBO
IC=100µA (BCX51)
45
V
BVCBO
IC=100µA (BCX52)
60
V
BVCBO
IC=100µA (BCX53)
100
V
BVCEO
IC=10mA (BCX51)
45
V
BVCEO
IC=10mA (BCX52)
60
V
BVCEO
IC=10mA (BCX53)
80
V
VCE(SAT)
IC=500mA, IB=50mA
0.5
V
VBE(ON)
VCE=2.0V, IB=500mA
1.0
V
hFE
VCE=2.0V, IC=5.0mA
63
hFE
VCE=2.0V, IC=150mA
63
250
hFE
VCE=2.0V, IC=150mA
(BCX51-10, BCX52-10, BCX53-10)
63
160
hFE
VCE=2.0V, IC=150mA
(BCX51-16, BCX52-16, BCX53-16)
100
250
hFE
VCE=2.0V, IC=500mA
40
fT
VCE=5.0V, IC=10mA, f=100MHz
50
MHz
BCX51
BCX52
BCX53
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R1 ( 18-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX51,
BCX52, and BCX53 types are PNP Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high current general
purpose amplifier applications.
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