60
Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
SOT-143 CASE
BAS56
DUAL HIGH CURRENT
SWITCHING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS56
type is an ultra-high speed silicon switching
diode manufactured by the epitaxial planar
process, in an epoxy molded surface mount
package with isolated dual diodes, designed
for high current, high speed switching
applications.
Marking code is L51.
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
60
V
Peak Repetitive Reverse Voltage
VRRM
60
V
Continuous Forward Current
IF
200
mA
Peak Repetitive Forward Current
IFRM
600
mA
Forward Surge Current, tp=1
µ
sec.
IFSM
4000
mA
Forward Surge Current, tp=1 sec.
IFSM
1000
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IR
VR=60V
100
nA
IR
VR=60V, TA=150
o
C
100
µ
A
IR
VR=75V
10
µ
A
VF
IF=10mA
0.75
V
VF
IF=200mA
1.00
V
VF
IF=500mA
1.25
V
CT
VR=0, f=1 MHz
2.5
pF
trr
IF=IR=400mA, RL=100
, Rec. to 40mA
6.0
ns
Qs
IF=10mA, VR=5.0V, RL=500
50
pC
VFR
IF=400mA, tr=30ns
1.2
V
VFR
IF=400mA, tr=100ns
1.5
V
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