FEATURES
SILICON RFIC
LOW CURRENT AMPLIFIER FOR
CELLULAR/CORDLESS TELEPHONES
·
SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V
·
LOW CURRENT CONSUMPTION:
UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V
·
HIGH EFFICIENCY:
UPC8151TB; P
1dB
= +2.5 dBm TYP @ f = 1 GHz
·
POWER GAIN:
UPC8151TB; G
P
= 12.5 dB TYP @ f = 1 GHz
·
OPERATING FREQUENCY:
100 MHz to 1900 MHz (Output port LC matching)
·
EXCELLENT ISOLATION:
UPC8151TB; ISOL = 38 dB TYP @ f = 1 GHz
·
HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT-363 package
UPC8151TB
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C, V
CC
= V
OUT
= 3.0 V, Z
L
= Z
S
= 50
, at LC matched frequency)
The UPC8151TB is a silicon RFIC designed as a buffer
amplifier for cellular or cordless telephones. This low current
amplifier operates on 3.0 V and is housed in a 6 pin super
minimold package.
The IC is manufactured using NEC's 20 GHz f
T
NESATTM III
silicon bipolar process. This process uses silicon nitride
passivation film and gold electrodes. These materials protect
the chip surface from external pollution and prevent corrosion/
migration. Thus, this IC has excellent performance, uniformity
and reliability.
DESCRIPTION
PART NUMBER
UPC8151TB
PACKAGE OUTLINE
SO6
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
Icc
Circuit Current, No signal
mA
2.8
4.2
5.8
G
P
Power Gain
f = 1.00 GHz
dB
9.5
12.5
14.5
f = 1.90 GHz
12.0
15.0
17.0
ISOL
Isolation
f = 1.00 GHz
dB
33.0
38.0
f = 1.90 GHz
29.0
34.0
P
1dB
Output Power at 1 dB Compression Point
f = 1.00 GHz
dBm
-1.0
+2.5
f = 1.90 GHz
-3.0
+0.5
NF
Noise Figure
f = 1.00 GHz
dB
6.0
7.5
f = 1.90 GHz
6.0
7.5
RL
IN
Input Return Loss(without matching circuit)
f = 1.00 GHz
dB
2.0
5.0
f = 1.90 GHz
1.0
4.0
RL
OUT
Output Return Loss (with external matching circuit)
f = 1.00 GHz
dB
10.0
f = 1.90 GHz
12.0
IM
3
3rd Order Intermodulation Distortion
f
1
= 1.000 GHz, f
2
= 1.001 GHz, P
O(each)
= -20 dBm
dBc
-62.0
f
1
= 1.900 GHz, f
2
= 1.901 GHz, P
O(each)
= -20 dBm
54.0
INSERTION POWER GAIN vs.
FREQUENCY AND VOLTAGE
Frequency, f (GHz)
Gain, G
P
(dB)
+20
+10
0
-10
0.3
1.0
3.0
V
CC
= 3.3 V
V
CC
= 3.0 V
Tuned at 1.9 GHz
Gain, G
P
(dB)
Frequency, f (GHz)
California Eastern Laboratories
+20
+10
0
-10
V
CC
= 3.3 V
V
CC
= 3.0 V V
CC
= 2.4 V
0.3
1.0
3.0
Tuned at 1 GHz
UPC8151TB
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CC
Supply Voltage
V
3.6
P
D
Total Power Dissipation
2
mW
200
T
A
Operating Temperature
°
C
-40 to +85
T
STG
Storage Temperature
°
C
-55 to +150
SYMBOLS
PARAMETERS
UNITS
MIN
TYP MAX
V
CC
Supply Voltage
V
2.4
3.0
3.3
T
A
Operating Temperature
°
C
-40
+25
+85
f
Operating Frequency
MHz
100
1900
RECOMMENDED
OPERATING CONDITIONS
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (T
A
= 85
°
C).
Pin No.
Symbol
Applied Voltage
Description
Internal Equivalent Circuit
1
INPUT
4
OUTPUT
Vcc through external
inductor.
6
Vcc
2.4 to 3.3
2
GND
0
3
5
PIN FUNCTIONS
Signal output pin. This output is
designed as an open collector.
Due to the high impedance output
this pin should be externally
equipped with an LC matching
circuit.
Signal input pin. An internal
matching circuit provides a 50
match over a wide bandwidth.
This pin must be coupled to signal
source with a blocking capacitor.
Power supply pin. This pin should
be externally equipped with a bypass
capacitor to minimize ground
impedance.
Ground pin. This pin should be
connected to system ground with
minimum inductance. Ground
pattern on the board should be
formed as wide as possible. All the
ground pins must be connected
together with wide ground pattern
to minimize impedance difference.
1
2
5
3
4
6
UPC8151TB
TYPICAL APPLICATION EXAMPLE
Location Examples in Digital Cellular
RX
SW
VCO
N
PLL
.
.
PA
PLL
TX
I
Q
Q
I
DEMOD
90
°
0
°
PARAMETER
OUTPUT PORT MATCHING FREQUENCY
PART NO.
Icc
1 GHz
1.9 GHz
PACKAGES
(mA)
G
P
ISOL
P
1dB
G
P
ISOL
P
1dB
(dB)
(dB)
(dBm)
(dB)
(dB)
(dBm)
UPC8128TB
2.8
12.5
39
-4.0
13.0
37
-4.0
6 pin super minimold
UPC8151TB
4.5
12.5
38
+2.5
15.0
34
+0.5
6 pin super minimold
UPC8152TB
5.6
23.0
40
-4.5
17.5
35
-8.5
6 pin super minimold
PRODUCT LINE-UP
(T
A
= +25
°
C, V
CC
= 3.0 V, Z
L
= Z
S
= 50
)
0
1
2
3
4
5
6
0
1
2
3
4
No Signals
V
CC
= 3.0 V
5
4
3
2
1
0
-60
-40
-20
0
+20
+40
+60
+80
+100
CIRCUIT CURRENT vs. VOLTAGE
CIRCUIT CURRENT vs. TEMPERATURE
Supply Voltage, V
CC
(V)
Circuit Current, I
CC
(mA)
Circuit Current, I
CC
(mA)
Temperature, T
A
(
°
C)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C unless otherwise specified)
UPC8151TB
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C unless otherwise specified)
+20
+10
0
-10
-20
-30
-40
-50
0.1
0.3
1.0
3.0
V
CC
= 3.3 V
V
CC
= 3.0 V
V
CC
= 2.4 V
V
CC
= 3.0 V
+20
+10
0
-10
-20
-30
-40
-50
0.1
0.3
1.0
3.0
T
A
=
-40
°
C
T
A
=
+25
°
C
T
A
=
+85
°
C
V
CC
= 3.0 V
V
CC
= 3.3 V
0.1
0.3
1.0
3.0
V
CC
= 2.4 V
-30
-40
-50
-60
-70
-30
-40
-50
-60
-70
0.1 0.3
1.0
3.0
V
CC
= 3.0 V
T
A
= +25°C
T
A
= -40°C
T
A
= +85°C
INSERTION POWER GAIN vs.
FREQUENCY AND VOLTAGE
INSERTION POWER GAIN vs.
FREQUENCY AND TEMPERATURE
Gain, G
P
(dB)
Frequency, f (GHz)
Frequency, f (GHz)
Isolation, ISOL (dB)
Frequency, f (GHz)
ISOLATION vs.
FREQUENCY AND VOLTAGE
Gain, G
P
(dB)
Isolation, ISOL (dB)
Frequency, f (GHz)
ISOLATION vs.
FREQUENCY AND TEMPERATURE
1.0 GHz OUTPUT PORT MATCHING
V
CC
= 3.3 V
0.1
0.3
1.0
3.0
0
-5
-10
-15
-20
V
CC
= 2.4 V
V
CC
= 3.0 V
V
CC
= 3.0 V
0
-5
-10
-15
-20
0.1
0.3
1.0
3.0
T
A
= -40
°
C
T
A
= +25
°
C
T
A
= +85
°
C
V
CC
= 3.0 V
INPUT RETURN LOSS vs.
FREQUENCY AND VOLTAGE
INPUT RETURN LOSS vs.
FREQUENCY AND TEMPERATURE
Frequency, f (GHz)
Frequency, f (GHz)
Input Return Loss, RL
IN
(dB)
Input Return Loss, RL
IN
(dB)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C unless otherwise specified)
UPC8151TB
1.0 GHz OUTPUT PORT MATCHING
T
A
= +25
°
C
T
A
= +85
°
C
0
-10
-20
-30
0.3
1.0
3.0
+10
T
A
= -40
°
C
0.1
V
CC
= 3.3 V
0
-10
-20
-30
0.3
1.0
3.0
+10
0.1
V
CC
= 3.0 V
V
CC
= 2.4 V
V
CC
= 3 V
V
CC
= 3 V
V
CC
= 3 V
+10
+5
0
-10
-5
-15
-20
-25
-30
-40
-35
-30
-25
-20
-15
-10
-5
0
+5
V
CC
= 3.0 V
T
A
= +25
°
C
T
A
= -40
°
C
T
A
= +85
°
C
+10
+5
0
-10
-5
-15
-20
-25
-30
-40
-35
-30
-25
-20
-15
-10
-5
0
+5
V
CC
= 3.0 V
f
1
= 1000 MHz
f
2
= 1001 MHz
+10
0
-10
-20
-30
-40
-50
-60
-70
-80
-40
-35
-30
-25
-20
-15
-10
-5
0
+5
IM
3
P
OUT
f
1
= 1000 MHz
f
2
= 1001 MHz
V
CC
= 3.3 V
V
CC
= 3.0 V
V
CC
= 2.4 V
60
50
40
30
20
10
0
-20
-15
-10
-5
0
+5
OUTPUT RETURN LOSS vs.
FREQUENCY AND VOLTAGE
Frequency, f (GHz)
Output Return Loss, RL
IN
(dB)
OUTPUT RETURN LOSS vs.
FREQUENCY AND TEMPERATURE
Frequency, f (GHz)
Output Return Loss, RL
IN
(dB)
OUTPUT POWER vs. INPUT POWER
AND VOLTAGE
OUTPUT POWER vs. INPUT POWER
AND TEMPERATURE
Output Power
, P
OUT
(dBm)
Input Power, P
IN(each)
(dBm)
Output Power
, P
OUT
(dBm)
Input Power, P
IN(each)
(dBm)
OUTPUT POWER OF EACH TONE AND
3rd ORDER INTERMODULATION DISTORTION
vs. INPUT POWER OF EACH TONE
Output Power of Each
T
one, P
O(each)
(dBm)
3rd Order Intermodulation Distortion, IM
3
(dB
C
)
Input Power of Each Tone, P
IN(each)
(dBm)
3rd ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE AND VOLTAGE
3rd Order Intermodulation Distortion, IM
3
(dB
C
)
Output Power of Each Tone, P
O (each)
(dBm)
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