ChipFind - Datasheet

Part Number P35-5123

Download:  PDF   ZIP
Data
sheet
www.bookham.com
Thinking RF solutions
HEMT MMIC Driver
Amplifier, 20 - 26GHz
The P35-5123-000-200 is a high performance 20-26GHz
Gallium Arsenide driver amplifier. With 0.3mm bondwires at
the input and output, over 12dB gain from 20-26GHz is
achieved. This product is intended for use in fixed-point
microwave systems and satellite communications.
The die is fabricated using Bookham Technology's 0.20µm
gate length, pHEMT process and is fully protected using
Silicon Nitride passivation for excellent performance and
reliability.
Features
· 23dBm Output Power
@ 24GHz
· 12dB Gain from 20 to 26GHz
· Small Die Size (2 x 1mm)
www.bookham.com
www.bookham.com
Thinking RF solutions
www.bookham.com
Parameter Conditions
Min
Typ
Max
Units
Small Signal Gain
20 ­ 26GHz
-
12
-
dB
Gain slope
20 ­ 26GHz
-
± 0.5
-
dB
Input Return Loss
20 ­ 26GHz
-
10
-
dB
Output Return Loss
20 ­ 26GHz
-
10
-
dB
Output power at 1dB
gain compression
24GHz, 5V
-
23
-
dBm
First Stage Current
By Adjustment of Vg1
-
50
-
mA
Second Stage Current
By Adjustment of Vg2
-
90
-
mA
Thermal Resistance
-
-
130
-
°C/W
Electrical Performance
Ambient Temperature 22±3º C, Zo = 50
, Vdd = 4.5V, Vg1 set for Id1=50mA, Vg2 set for Id2=90mA. Unless otherwise stated
Output Return Loss
0
5
10
15
20
25
18
20
22
24
26
Frequency (GHz)
Return Loss (dB)
P35-5123-000-200
Typical RFOW Performance (----- With Bondwires)
Input Return Loss
0
5
10
15
20
25
18
20
22
24
26
Frequency (GHz)
Return Loss (dB)
Pout vs Pin (5v)
14
16
18
20
22
24
0
2
4
6
8
10
12
14
16
Pin (dBm)
Pout (dBm)
20GHz
22GHz
24GHz
Output Power @ 1dB compression
(5v)
15
16
17
18
19
20
21
22
23
24
25
20
21
22
23
24
25
26
Frequncy (GHz)
Pout (dBm)
Gain
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Frequency (GHz)
Gain (dB)
Reverse Isolation
0
20
40
60
18
20
22
24
26
Frequency (GHz)
Reverse Isolation (dB)
Notes
1. All parameters measured on wafer
Thinking RF solutions
www.bookham.com
P35-5123-000-200
Typical RFOW Performance
Gain vs Pin (5V)
10
12
14
16
18
-8 -6 -4 -2 0
2
4
6
8 10 12 14 16
Pin (dBm)
Gain (dB)
20GHz
22GHz
24GHz
Current vs Pin (5V)
100
125
150
175
200
-8 -6 -4 -2 0 2
4
6 8 10 12 14 16
Pin (dBm)
Current Ids (mA)
20GHz
22GHz
24GHz
PAE vs Pin(5V)
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
Pin (dBm)
PAE (%)
20GHz
22GHz
24GHz
Thinking RF solutions
www.bookham.com
Typical S-parameters (RFOW)
P35-5123-000-200
Frequency S11
S21
S12
S22
(GHz)
Mag
Angle
Mag
Angle
Mag
Angle
Mag
Angle
18.00
0.53
-45.8
2.47
-162.4
0.002
-179.3
0.14
-45.6
18.25
0.52
-47.0
2.56
-174.6
0.003
103.8
0.14
-41.4
18.50
0.52
-49.9
2.76
175.4
0.002
70.5
0.16
-42.5
18.75
0.52
-52.9
2.97
163.9
0.002
82.6
0.18
-48.0
19.00
0.52
-56.6
3.17
152.3
0.003
58.1
0.19
-52.6
19.25
0.52
-60.4
3.36
140.6
0.003
58.1
0.21
-56.2
19.50
0.52
-64.5
3.53
128.5
0.002
40.6
0.23
-62.3
19.75
0.51
-69.1
3.67
116.7
0.003
38.7
0.23
-66.7
20.00
0.50
-74.0
3.81
104.9
0.003
34.6
0.24
-71.7
20.25
0.48
-78.9
3.93
93.2
0.003
28.6
0.25
-76.3
20.50
0.46
-83.9
4.03
81.5
0.003
15.9
0.25
-80.5
20.75
0.44
-88.7
4.12
69.9
0.003
11.3
0.26
-84.8
21.00
0.41
-93.8
4.20
58.1
0.003
4.4
0.26
-89.0
21.25
0.38
-98.5
4.23
46.3
0.003
-2.8
0.26
-93.1
21.50
0.34
-102.2
4.24
34.8
0.004
-13.3
0.26
-97.1
21.75
0.30
-105.4
4.24
23.6
0.003
-20.7
0.25
-100.5
22.00
0.27
-107.6
4.23
12.5
0.004
-30.0
0.25
-103.8
22.25
0.23
-108.4
4.21
1.4
0.004
-41.7
0.25
-107.2
22.50
0.20
-107.2
4.17
-9.4
0.004
-49.7
0.25
-110.1
22.75
0.17
-104.7
4.12
-20.1
0.004
-63.7
0.24
-113.2
23.00
0.15
-97.5
4.07
-30.4
0.003
-64.6
0.24
-115.7
23.25
0.13
-89.2
4.03
-40.8
0.003
-74.6
0.24
-118.6
23.50
0.12
-78.3
3.99
-51.0
0.003
-82.0
0.23
-121.2
23.75
0.12
-66.6
3.95
-61.1
0.003
-99.6
0.23
-124.0
24.00
0.13
-56.1
3.91
-71.3
0.003
-107.9
0.22
-126.7
24.25
0.14
-47.8
3.88
-81.4
0.003
-114.9
0.22
-129.5
24.50
0.15
-41.3
3.86
-91.4
0.003
-128.6
0.22
-132.6
24.75
0.17
-36.1
3.85
-101.7
0.002
-135.1
0.22
-135.7
25.00
0.19
-32.6
3.85
-112.2
0.002
-142.2
0.22
-139.0
25.25
0.22
-30.2
3.84
-122.9
0.002
-152.1
0.21
-142.4
25.50
0.25
-29.1
3.84
-133.8
0.003
-141.0
0.21
-145.4
25.75
0.28
-28.9
3.85
-144.8
0.003
-154.3
0.21
-148.1
26.00
0.31
-29.1
3.88
-156.4
0.004
-165.0
0.21
-152.2
Thinking RF solutions
www.bookham.com
P35-5123-000-200
Pad Details
Die size:
2.08 x 1.14mm
RF bond pads (1 & 2):
80µm x 80µm
All other bond pads:
120µm x 120µm
Die Thickness:
100µm
Pad
Function
1
RF Input
2
RF Output
3
Gnd
4
Vd2
5
N/C
6
Vg2
7
Vd1
8
N/C
9
Vg1
10
Gnd
Chip Outline