KST-J017-000
1
SUF621EF
N-Channel Enhancement-Mode MOSFET
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
Description
· High speed switching application.
· Analog switch application.
Features
· 2.5V Gate drive.
· Low threshold voltage : Vth = 0.5~1.5V.
· Two STK1828 Chips in SOT-563F Package.
Ordering
Information
Type NO.
Marking
Package Code
SUF621EF
H
SOT-563F
Outline Dimensions unit :
mm
PIN Connections
1. Source 1
2. Gate 1
3. Drain 2
4. Source 2
5. Gate 2
6. Drain1
4 5 6
3 2 1
Q1
Q2
KST-J017-000
2
SUF621EF
Absolute maximum ratings
(Q1,Q2 Common) (Ta=25
°C)
Characteristic Symbol
Ratings
Unit
Drain-Source voltage
V
DS
20 V
Gate-Source voltage
V
GSS
10 V
DC Drain current
I
D
50
mA
Drain Power dissipation
P
D
100
mW
Channel temperature
T
ch
150 °C
Storage temperature range
T
stg
-55~150 °C
Electrical Characteristics
(Q1,Q2 Common)
(Ta=25
°C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Drian-Source breakdown voltage
BV
DSS
I
D
=100µA, V
GS
=0
20 V
Gate-Threshold voltage
V
th
I
D
=0.1mA, V
DS
=3V 0.5
1.5
V
Drain cut-off current
I
DSS
V
DS
=20V, V
GS
=0
1
µA
Gate leakage current
I
GSS
V
GS
=10V, V
DS
=0
1
µA
Drain-Source on-resistance
R
DS(ON)
V
GS
=2.5V, I
D
=10mA
20
40
Forward transfer admittance
Y
fs
V
DS
=3V, I
D
=10mA 20
mS
Input capacitance
C
iss
V
DS
=3V, V
GS
=0, f=1MHz
5.5
pF
Output capacitance
C
oss
V
DS
=3V, V
GS
=0, f=1MHz
6.5
pF
Reverse Transfer capacitance
C
rss
V
DS
=3V, V
GS
=0, f=1MHz
1.6
pF
Turn-on time
t
on
V
DD
=3V, I
D
=10mA
V
GEN
=0~2.5V
0.14
Turn-off time
t
off
V
DD
=3V, I
D
=10mA
V
GEN
=0~2.5V
0.14
* Switching Time Test Circuit
=
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