KSD-5001-001
1
SUD492H
Silicon epitaxial planar Diode
Features
·
Ultra high speed
·
Fast reverse recovery time : t
rr
=1.6ns(Typ.)
·
Small total capacitance : C
T
=2.2pF(Typ.)
·
Three SDS914 chips in SOT-353 package
Ordering
Information
Type NO.
Marking
Package Code
SUD492H X6
SOT-353
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
0.25 Min.
1 5
2
3 4
0.
15~0.
3
0
PIN Connections
1. Anode
2. Cathode
3. Anode
4. Anode
5. Anode
2.1 BSC
1.25 BSC
0~0.
1
0.
9
±
0.
1
1.
30 B
S
C
2.
0 B
S
C
0.
1~0.
25
3 2
1
4
5
KSD-5001-001
2
SUD492H
Absolute maximum ratings
Ta=25
°
C
Characteristic Symbol
Ratings
Unit
Maximum(peak) reverse voltage
V
RM
85 V
Reverse voltage
V
R
80 V
Maximum(peak) forward current
I
FM
300
mA
Average forward current
I
O
100
mA
Surge current(10ms)
I
FSM
2 A
Power dissipation
P
D
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
-55 ~ 150
°
C
Electrical Characteristics
Ta=25
°
°
°
°
C
Characteristic Symbol Test
Condition Min.
Typ.
Max.
Unit
V
F(1)
I
F
=1mA -
0.6
-
V
F(2)
I
F
=10mA -
0.7
-
Forward voltage
V
F(3)
I
F
=100mA -
0.9
1.2
V
Reverse current
I
R
V
R
=80V -
-
0.5
µ
A
Total capacitance
C
T
V
R
=0, f=1MHz
-
2.2
4.0
pF
Reverse recovery time
t
rr
I
F
=10mA -
1.6
4.0
ns
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