KST-I016-000
1
STJ828M
P-Channel Enhancement-Mode MOSFET
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m
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c
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n
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Description
· High speed switching application.
· Analog switch application.
Features
· -2.5V Gate drive.
· Low threshold voltage : Vth = -0.5~ -1.5V.
· High speed.
Ordering
Information
Type NO.
Marking
Package Code
STJ828M J828 TO-92M
Outline Dimensions unit :
mm
PIN Connections
1. Source
2. Drain
3. Gate
14.
0
±
0.
40
4.0±0.1
0.44 REF
0.52 REF
3.
0
±
0.
1
1.27 Typ.
2.54 ± 0.1.
3.0±0.1
3.8 Min.
0.
42 T
y
p
.
0.
7 T
y
p
.
2.15 Typ.
2.
3
±
0.
1.
11.
85 T
y
p
.
KST-I016-000
2
STJ828M
Absolute maximum ratings
(Ta=25
°C)
Characteristic Symbol
Ratings
Unit
Drain-Source voltage
V
DS
-20 V
Gate-Source voltage
V
GSS
±
7
V
DC Drain current
I
D
-50
mA
Drain Power dissipation
P
D
400
mW
Channel temperature
T
ch
150 °C
Storage temperature range
T
stg
-55~150 °C
Electrical Characteristics
(Ta=25
°C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Drian-Source breakdown voltage
BV
DSS
I
D
=-100µA, V
GS
=0
-20 V
Gate-Threshold voltage
V
th
I
D
=-0.1mA, V
DS
=-3V -0.5
-1.5
V
Drain cut-off current
I
DSS
V
DS
=-20V, V
GS
=0
-1
µA
Gate leakage current
I
GSS
V
GS
=±7V, V
DS
=0
±
1
µA
Drain-Source on-resistance
R
DS(ON)
V
GS
=-2.5V, I
D
=-10mA
40
Forward transfer admittance
Y
fs
V
DS
=-3V, I
D
=-10mA 15
mS
Input capacitance
C
iss
V
DS
=-3V, V
GS
=0, f=1MHz
10.4
pF
Output capacitance
C
oss
V
DS
=-3V, V
GS
=0, f=1MHz
8.4
pF
Reverse Transfer capacitance
C
rss
V
DS
=-3V, V
GS
=0, f=1MHz
2.8
pF
Turn-on time
t
ON
V
DD
=-3V, I
D
=-10mA
V
GEN
=0~-2.5V
0.15
Turn-off time
t
OFF
V
DD
=-3V, I
D
=-10mA
V
GEN
=0~-2.5V
0.13
*. Switching Time Test Circuit
=
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