KST-I007-000
1
STD1862L
NPN Silicon Transistor
Descriptions
· Audio power amplifier
· High current application
Features
· High current : I
C
=2A
· Complementary pair with STB1277L
Ordering
Information
Type NO.
Marking
Package Code
STD1862L
STD1862
TO-92L
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Emitter
2. Collector
3. Base
KST-I007-000
2
STD1862L
Absolute maximum ratings
(Ta=25
°
°
°
°C)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
30 V
Collector-Emitter voltage
V
CEO
30 V
Emitter-Base voltage
V
EBO
5 V
Collector current
I
C
2 A
Collector dissipation
P
C
1 W
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-55~150 °C
Electrical Characteristics
(Ta=25
°
°
°
°C)
Characteristic
Symbol Test
Condition Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=100µA, I
E
=0
30 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=10mA, I
B
=0 30
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=1Ma, I
C
=0 5
-
-
V
Collector cut-off current
I
CBO
V
CB
=30V, I
E
=0 -
-
100
nA
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0 -
-
100
nA
DC current gain
h
FE
*
V
CE
=2V, I
C
=500mA 100
-
320
-
Base-Emitter on voltage
V
BE(on)
V
CE
=2V, I
C
=500mA -
-
1
V
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=2A, I
B
=0.2A -
-
0.8
V
Transition frequency
f
T
V
CB
=5V, I
C
=50mA -
170
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
48
-
pF
* : h
FE
rank / O : 100~200, Y : 160~320
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