KST-4007-000 1
STC918K
NPN Silicon Transistor
Features
·
High current transition frequency
f
T
=9.0 GHz(Typ.) @V
CE
=6V, I
C
=15mA
·
Low Noise Figure
NF
min
=1.4dB(Typ.) @1.0 GHz, V
CE
=8V, I
C
=3mA
·
Maximum Stable Gain(MSG)=19dB @1.0 GHz, V
CE
=6V, I
C
=10mA
·
Output third order intercept output(IP
3
)=29dBm @ 1.0 GHz,V
CE
=6V, I
C
=10mA
Ordering
Information
Type NO. Marking Package Code
STC918K F4 SOT-623F
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Emitter
3. Collector
KST-4007-000 2
S
21
2
(1-S
11
2
)(1-S
22
2
)
*2 :
*2 :
*2 :
*2 : Maximum unilaterial gain (Gu
MAX
)=
S
21
S
12
(K±(K
2
-1)
, if K>1
S
12
S
21
, if K<1
Absolute maximum ratings
Ta=25
°
°
°
°
C
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
20 V
Collector-Emitter voltage
V
CEO
10 V
Emitter-base voltage
V
EBO
1.5 V
Collector current
I
C
50
mA
Collector dissipation
P
C
100
mW
Junction temperature
T
j
150
°
C
Storage temperature range
T
stg
-55~150
°
C
Electrical Characteristics
T
C
=25
°
°
°
°
C
Characteristic
Symbol Test
Condition Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
*1
I
C
=100
µ
A, I
E
=0
20 - - V
Collector-Emitter breakdown voltage BV
CEO
*1
I
C
=100uA, I
B
=0 10
-
-
V
Collector cut-off current
I
CBO
*1
V
CB
=10V, I
E
=0 -
-
0.1
µ
A
Emitter cut-off current
I
EBO
*1
V
EB
=1V, I
C
=0 -
-
0.1
µ
A
DC current gain
h
FE
*1
V
CE
=6V, I
C
=5mA 50
-
-
-
Transition frequency
f
T
V
CE
=6V, I
E
=15mA -
9
-
GHz
V
CB
=1V, I
E
=0, f=1MHz
-
0.4
-
Collector output capacitance
C
ob
V
CB
=5V, I
E
=0, f=1MHz
-
0.3
-
pF
Performance Characteristics
T
C
=25
°
°
°
°
C
Characteristic
Symbol Test
Condition Min.
Typ.
Max.
Unit
V
CE
=1V, I
C
=1mA, f=1GHz
-
7
-
Insertion Gain
S
21
2
V
CE
=6V, I
C
=15mA, f=1GHz
-
15
-
dB
V
CE
=1V, I
C
=1mA, f=1GHz
-
13
-
Maximum Unilateral Gain
Gu
MAX
*2
V
CE
=6V, I
C
=15mA, f=1GHz
-
17
-
dB
Maximum Stable Gain
MSG
*4
V
CE
=1V, I
C
=1mA, f=1GHz
-
12
-
Maximum Available Gain
MAG
*3
V
CE
=6V, I
C
=15mA, f=1GHz
-
18
-
dB
V
CE
=1V, I
C
=1mA, f=1GHz
-
1.6
-
Noise Figure(Minimum)
NF
MIN
V
CE
=6V, I
C
=5mA, f=1GHz
-
1.4
dB
V
CE
=1V, I
C
=1mA, f=1GHz
-
24
-
Noise Resistance
R
N
V
CE
=6V, I
C
=5mA, f=1GHz
-
19
-
V
CE
=1V, I
C
=1mA, f=1GHz
10
Associated Gain at Minimum NF
G
NF
V
CE
=6V, I
C
=5mA, f=1GHz
15
dB
Output Power at 1.0dB Gain
Compression
P
1dB
V
CE
=6V, I
C
=15mA, f=1GHz
-
13
-
dBm
Output 3'rd Intercept
OIP
3
*5
V
CE
=6V, I
C
=15mA, f=1GHz
-
28
-
dBm
*1 :
*1 :
*1 :
*1 : Pulse width 300us, Duty cycle 2% pulsed.
*3 :
*3 :
*3 :
*3 : Maximum Avaible Gain(MAG)=
*4 :
*4 :
*4 :
*4 : Maximum Stable Gain(MSG)=
*5 :
*5 :
*5 :
*5 : Zin=50
and matched for optimum IP
3
STC918K
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