KST-I005-000
1
STA124M
PNP Silicon Transistor
Features
· Suitable for low voltage large current drivers
· High DC current gain and large current capability
·
Complementary pair with STC128M
Ordering
Information
Type NO. Marking Package Code
STA124M A124 TO-92M
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Emitter
2. Collector
3. Base
14.
0
±
0.4
0
4.0
±0.1
0.44 REF
0.52 REF
3.0
±
0.1
1.27 Typ.
2.54
±0.1.
3.0
±0.1
0
.
42
T
y
p
.
0.7 Typ
.
1 2 3
1 2 3
1 2 3
1 2 3
3.8 Min.
KST-I005-000
2
STA124M
Absolute maximum ratings
(Ta=25
°
°
°
°C)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
-15 V
Collector-Emitter voltage
V
CEO
-12 V
Emitter-Base voltage
V
EBO
-6.5 V
Collector current
I
C
-1 A
Collector dissipation
P
C
400
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-55~150 °C
Electrical Characteristics
(Ta=25
°
°
°
°C)
Characteristic
Symbol Test
Condition Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=-50µA, I
E
=0
-15 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=-1mA, I
B
=0 -12
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=-50µA, I
C
=0
-6.5 - - V
Collector cut-off current
I
CBO
V
CB
=-15V, I
E
=0 -
-
-0.1
µA
Emitter cut-off current
I
EBO
V
EB
=-6V, I
C
=0 -
-
-0.1
µA
DC current gain
h
FE
V
CE
=-1V, I
C
=-100mA 200
-
450
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA -
-0.2
-0.4
V
Transistor frequency
f
T
V
CE
=-5V, I
C
=-50mA -
260
-
MHz
Collector output capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
5
-
pF
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