KST-2096-000
1
SBT5401F
PNP Silicon Transistor
Description
· General purpose amplifier
· High voltage application
Features
· high collector breakdown voltage : V
CBO
= -160V, V
CEO
= -150V
· Low collector saturation voltage : V
CE(sat)
=-0.5V(MAX.)
· Complementary pair with SBT5551F
Ordering
Information
Type NO.
Marking
Package Code
SBT5401F
NFN
SOT-23F
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Emitter
3. Collector
0.
4
±
0.
05
0~0.
1
3
1
2
1.
90 BSC
2.
9
±
0.
1
0.
15
±
0.
05
2.4±0.1
0.
9
±
0.
1
1.6±0.1
KST-2096-000
2
SBT5401F
Absolute maximum ratings
(Ta=25
°C)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
-160 V
Collector-Emitter voltage
V
CEO
-150 V
Emitter-Base voltage
V
EBO
-5 V
Collector current
I
C
-600
mA
Collector dissipation
P
C
200
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-55~150 °C
Electrical Characteristics
(Ta=25
°C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=-100µA, I
E
=0
-160 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=-1mA, I
B
=0 -150
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=-10µA, I
C
=0
-5 - - V
Collector cut-off current
I
CBO
V
CB
=-120V, I
E
=0 -
-
-100
nA
Emitter cut-off current
I
EBO
V
EB
=-3V, I
C
=0 -
-
-100
nA
DC current gain
h
FE (1)
V
CE
=-5V, I
C
=-1mA 50
-
-
DC current gain
h
FE (2)
V
CE
=-5V, I
C
=-10mA 60
-
240
-
DC current gain
h
FE (3)
V
CE
=-5V, I
C
=-50mA 50
-
-
Collector-Emitter saturation voltage
V
CE(sat)(1)
*
I
C
=-10mA, I
B
=-1mA -
-
-0.2
V
Collector-Emitter saturation voltage
V
CE(sat)(2)
*
I
C
=-50mA, I
B
=-5mA -
-
-0.5
V
Base-Emitter saturation voltage
V
BE(sat)(1)
*
I
C
=-10mA, I
B
=-1mA -
-
-1
V
Base-Emitter saturation voltage
V
BE(sat)(2)
*
I
C
=-50mA, I
B
=-5mA -
-
-1
V
Transition frequency
f
T
V
CE
=-10V, I
C
=-10mA 100
-
400
MHz
Collector output capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
-
6
pF
* : Pulse Tester : Pulse Width 300
µs, Duty Cycle 2.0%
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