KST-2069-000
1
2SC5345SF
NPN Silicon Transistor
Description
·
RF amplifier
Features
·
High current transition frequency
f
T
=550MHz(Typ.), [V
CE
=6V, I
E
=-1mA]
·
Low output capacitance :
C
ob
=1.4pF(Typ.) [V
CB
=6V, I
E
=0]
·
Low base time constant and high gain
·
Excellent noise response
Ordering
Information
Type NO.
Marking
Package Code
2SC5345SF
Z
SOT-23F
: h
FE
rank
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Emitter
3. Collector
0.
4
±
0.
0
5
0~
0.
1
3
1
2
1.
9
0
B
S
C
2.
9
±
0.
1
0.
1
5
±
0.
05
2.4
±
0.1
0.
9
±
0.
1
1.6
±
0.1
KST-2069-000
2
Absolute maximum ratings
Ta=25
°
°
°
°
C
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
30
V
Collector-Emitter voltage
V
CEO
20
V
Emitter-Base voltage
V
EBO
4
V
Collector current
I
C
20
mA
Collector dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature range
T
stg
-55~150
°
C
Electrical Characteristics
Ta=25
°
°
°
°
C
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=10
µ
A, I
E
=0
30
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=5mA, I
B
=0
20
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=10
µ
A, I
C
=0
4
-
-
V
Collector cut-off current
I
CBO
V
CB
=30V, I
E
=0
-
-
0.5
µ
A
Emitter cut-off current
I
EBO
V
EB
=4V, I
C
=0
-
-
0.5
µ
A
DC current gain
h
FE
*
V
CE
=6V, I
C
=1mA
40
-
240
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA
-
-
0.3
V
Transistor frequency
f
T
V
CE
=6V, I
E
=-1mA
-
550
-
MHz
Collector output capacitance
C
ob
V
CB
=6V, I
E
=0, f=1MHz
-
1.4
-
pF
* : h
FE
rank / R : 40~80, O : 70~140, Y : 120~240
2SC5345SF
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