KST-9010-000
1
2N3904
NPN Silicon Transistor
Descriptions
·
General small signal application
·
Switching application
Features
·
Low collector saturation voltage
·
Collector output capacitance
·
Complementary pair with 2N3906
Ordering
Information
Type NO.
Marking
Package Code
2N3904
2N3904
TO-92
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
4.5
±
0.1
4.
5
±
0.
1
0.4
±
0.02
1.27 Typ
.
2.54 Typ
.
1 2 3
3.45
±
0.1
2.25
±
0.1
2.06
±
0.1
1.
2
0
±
0.
1
0.
3
8
PIN Connections
1. Emitter
2. Base
3. Collector
14.
0
±
0.
40
KST-9010-000
2
2N3904
Absolute maximum ratings
Ta=25
°
°
°
°
C
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
60
V
Collector-Emitter voltage
V
CEO
40
V
Emitter-base voltage
V
EBO
6
V
Collector current
I
C
200
mA
Collector dissipation
P
C
625
mW
Junction temperature
T
j
150
°
C
Storage temperature range
T
stg
-55~150
°
C
Electrical Characteristics
Ta=25
°
°
°
°
C
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=10
µ
A, I
E
=0
60
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0
40
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=10
µ
A, I
C
=0
6
-
-
V
Collector cut-off current
I
CEX
V
CE
=30V, V
EB
=3V
-
-
50
nA
DC current gain
h
FE
V
CE
=1V, I
C
=10mA
100
-
300
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=50mA, I
B
=5mA
-
-
0.3
V
Transition frequency
f
T
V
CE
=20V, I
C
=10mA,
f=100MHz
300
-
-
MHz
Collector output capacitance
C
ob
V
CB
=5V, I
E
=0, f=1MHz
-
-
4
pF
Delay time
t
d
-
-
35
ns
Rise time
t
r
V
CC
=3V
dc
, V
BE(off)
=0.5V
dc
.
I
C
=10mA
dc
, I
B1
=1mA
dc
-
-
35
ns
Storage time
t
s
-
-
200
ns
Fall Time
t
f
V
CC
=3V
dc
,I
C
=10mA
dc
,
I
B1
=I
B2
=1mA
dc
-
-
50
ns
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