A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
·
NORTH HOLLYWOOD, CA 91605
·
(818) 982-1200
·
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CER
I
C
= 10 mA
R
BE
= 75
30
V
BV
CBO
I
C
= 20 mA
65
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CER
V
CE
= 28 V
R
BE
= 75
10
mA
h
FE
V
CE
= 10 V I
C
= 2.0 A
30
120
---
G
p
V
CE
= 28 V
I
cq
= 2X50 mA
f = 860 MHz
8.5
dB
V
CE
= 28 V
I
cq
= 2X50 mA
f = 860 MHz
55
%
P
out
V
CE
= 28 V
I
cq
= 2X50 mA
f = 860 MHz
1.0 dB
COMPRESSION
(ref = 25 W)
100 W
FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL)
P
out
V
CE
= 28 V
I
cq
= 2X50 mA
f = 860 MHz
125
W
P
out
V
CE
= 32 V
I
cq
= 2X25 mA
f = 860 MHz
150
W
NPN SILICON RF POWER TRANSISTOR
TPV8100B
DESCRIPTION:
The
ASI TPV8100B
is Designed for
Transmitter Output Stages Covering
TV Band IV and V, Operating at 28 V.
FEATURES INCLUDE:
·
Internal Input, Output Matching
·
Common Emitter Configuration
·
Gold Metalization
·
Emitter Ballasting
MAXIMUM RATINGS
I
C
12 A
V
CER
40 V R
BE
= 10
P
DISS
215 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
JC
0.8
O
C/W
PACKAGE STYLE .438X.450 4LFL
1 = COLLECTOR #1 2 = COLLECTOR
#2
3 = BASE #1 4 = BASE #2
5 = EMITTER CASE (COMMON)
TPV8100B
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