A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
·
NORTH HOLLYWOOD, CA 91605
·
(818) 982-1200
·
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV
CES
I
C
= 50 mA
36
V
BV
CEO
I
C
= 50 mA
16
BV
EBO
I
E
= 5.0 Ma
4.0
V
I
CES
V
CE
= 15 V
15
mA
h
FE
V
CE
= 5.0 V I
C
= 6.0 A
20
150
---
C
OB
V
CB
= 12.5 V f = 1.0 MHz
130
150
pF
P
G
C
V
CE
= 12.5 V P
OUT
= 60 W f = 470 MHz
4.4
55
5.0
65
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF648
DESCRIPTION:
The
ASI MRF648
is Designed for
12.5 V UHF large signal amplifier
applications up to 512 MHz.
FEATURES:
·
Internal Input Matching Network
·
P
G
= 4.4 dB at 60 W/470 MHz
·
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
11 A
V
CBO
36 V
V
CEO
16 V
V
EBO
4.0 V
P
DISS
175 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
JC
1.0 °C/W
PACKAGE STYLE .500 6L FLG
Common Emitter
M INIM UM
inches / mm
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
M AXIMUM
.220 / 5.59
.007 / 0.18
.510 / 12.95
inches / mm
.725 / 18.42
H
DIM
K
L
I
J
.970 / 24.64
.980 / 24.89
.170 / 4.32
N
M
.120 / 3.05
.135 / 3.43
.150 / 3.43
.160 / 4.06
.125 / 3.18
.090 / 2.29
.105 / 2.67
.285 / 7.24
.150 / 3.81
.045 / 1.14
E
F
.725/18,42
I
G
J
K
L
M
A
D
C
B
2x ØN
FULL R
H
.835 / 21.21
.865 / 21.97
.210 / 5.33
.200 / 5.08
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