A D V A N C E D S E M I C O N D U C T O R, I N C.
REV.A
7525 ETHEL AVENUE
·
NORTH HOLLYWOOD, CA 91605
·
(818) 982-1200
·
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL
MAXIM
UNITS
V
R
I
R
= 10
µ
A
120
V
V
F
I
F
= 1 mA
1.0
V
I
R
V
R
= 100 V
100
µ
µ
µ
µ
A
C
T
V
R
= 4 V f = 1.0 MHz
20
22
24
pF
C
T
C
T0
/ C
T120
f = 1.0 MHz
9.0
---
Q
V
R
= 4 V f = 50 MHz
300
---
R
S
I
F
= 10 mA f = 2400 MHz
0.9
SILICON ABRUPT VARACTOR DIODE
AT12017-21
DESCRIPTION:
The
AT12017
-21
is Designed for High
Performance RF and Microwave
Applications Requiring an Abrupt
Variable Capacitance Characteristic.
FEATURES INCLUDE:
·
High Tuning Ratio,
C
T
= 9.5 MIN.
·
High Quality Factor, Q = 300 MIN.
·
Hermetic Package, C
P
= .20 pF
L
S
= .42 nH
MAXIMUM RATINGS
I
F
200 mA
V
R
120 V
P
DISS
1.75W @ T
C
25
O
C
T
J
-55
O
C to +150
O
C
T
STG
-55
O
C to +150
O
C
JC
70
O
C/W
PACKAGE STYLE 21
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