P-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003
APM9435
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
Applications
·
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
SO
-
8
·
-30V/-4.6A, R
DS(ON)
= 52m
(typ.) @ V
GS
= -10V
R
DS(ON)
= 80m
(typ.) @ V
GS
= -4.5V
··
··
·
Super High Density Cell Design
··
··
·
Reliable and Rugged
··
··
·
SO-8 Package
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
-30
V
GSS
Gate-Source Voltage
±25
V
I
D
Maximum Drain Current Continuous T
A
= 25
°
C
-4.6
I
DM
Maximum Drain Current Pulsed
-20
A
Absolute Maximum Ratings
(T
A
= 25
°
C unless otherwise noted)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
P-Channel MOSFET
G
D
S
S
S
D D D
A P M 943 5
H a n d lin g C o d e
T e m p . R a n g e
P a c k a g e C o d e
P a c k a g e C o d e
K : S O -8
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 °C
H a n d lin g C o d e
T U : T u b e
T R : T a p e & R e e l
A P M 9 4 3 5
A P M 9 4 3 5
X X X X X
X X X X X - D a te C o d e
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003
APM9435
www.anpec.com.tw
2
Symbol
Parameter
Rating
Unit
T
A
= 25
°
C
2.5
P
D
Maximum Power Dissipation
T
A
= 100
°
C
1.0
W
T
J
)
T
STG
Maximum Operating and Storage Junction Temperature
-55 to 150
°
C
R
JA
Thermal Resistance - Junction to Ambient
50
°C/W
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Absolute Maximum Ratings
(T
A
= 25
°
C unless otherwise noted)
APM9435
Symbol
Parameter
Test Condition
Min.
Typ
a
. Max.
Unit
Static
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250
µ
A
-30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V
-1
uA
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250
µ
A
-1
-3
V
I
GSS
Gate Leakage Current
V
GS
=±25V, V
DS
=0V
±100
nA
V
GS
=-10V, I
D
=-4.6A
52
60
R
DS(ON)
Drain-Source On-state Resistance
b
V
GS
=-4.5V, I
D
=-2A
80
95
m
V
SD
Diode Forward Voltage
b
I
SD
=-3A, V
GS
=0V
-0.6
-1.3
V
Dynamic
a
Q
g
Total Gate Charge
22.5
29
Q
gs
Gate-Source Charge
4.5
Q
gd
Gate-Drain Charge
V
DS
=-15V, V
GS
=-10V,
I
D
=-4.6A
2
nC
t
d(ON)
Turn-on Delay Time
8
17
t
r
Turn-on Rise Time
8
18
t
d(OFF)
Turn-off Delay Time
35
60
t
f
Turn-off Fall Time
V
DD
=-25V, R
L
=12.5
,
I
D
=-2A , V
GEN
=-10V,
R
G
=6
,
11
28
ns
C
iss
Input Capacitance
845
C
oss
Output Capacitance
120
C
rss
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-25V
Frequency = 1.0MHZ
80
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width
300
µ
s, duty cycle
2%
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003
APM9435
www.anpec.com.tw
3
0.0
2.5
5.0
7.5 10.0 12.5 15.0 17.5 20.0
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0
2
4
6
8
10
0
5
10
15
20
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0
1
2
3
4
5
0
5
10
15
20
Typical Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
-I
D-
Drain Current (A)
Transfer Characteristics
-V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
Tj - Junction Temperature (°C)
-V
GS(th)-
Threshold V
oltage (V)
(Normalized)
On-Resistance vs. Drain Current
-V
GS
=4.5V
-I
D
- Drain Current (A)
-V
GS
=10V
R
DS(on)
-On-Resistance (
)
-I
DS
=250
µ
A
Output Characteristics
-I
D
-Drain Current (A)
-V
DS
- Drain-to-Source Voltage (V)
-V
GS
=4V
-V
GS
=5,6,7,8,9,10V
-V
GS
=3V
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003
APM9435
www.anpec.com.tw
4
0
5
10
15
20
25
30
0
200
400
600
800
1000
1200
1
2
3
4
5
6
7
8
9
10
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0
5
10
15
20
25
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Typical Characteristics
-V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
-On-Resistance (
)
On-Resistance vs. Gate-to-Source Voltage
R
DS(on)
-On-Resistance (
)
(Normalized)
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (°C)
-V
GS
=10V
-I
D
=4.6A
-V
DS
- Drain-to-Source Voltage (V)
Capacitance
Capacitance (pF)
Gate Charge
Q
G
- Gate Charge (nC)
-V
GS
-Gate-Source V
oltage (V)
-V
DS
=15V
-I
DS
=4.6A
-I
D
=4.6A
Frequency=1MHz
Crss
Coss
Ciss
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003
APM9435
www.anpec.com.tw
5
0.01
0.1
1
10
0
10
20
30
40
50
60
70
80
30
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
30
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.1
1
10
20
Typical Characteristics
Single Pulse Power
Time (sec)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
D= 0.02
Duty Cycle = 0.5
D= 0.2
D= 0.1
D= 0.05
SINGLE PULSE
Power (W)
Source-Drain Diode Forward Voltage
-V
SD
-Source-to-Drain Voltage (V )
-I
S
-Source Current (
)
T
J
=150°C
T
J
=25°C
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50°C/W
3.T
JM
-T
A
=P
DM
Z
thJA
4.Surface Mounted
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