Dual N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM7313
A P M 731 3
H a n d lin g C o d e
T e m p . R a n g e
P a c k a g e C o d e
P a c k a g e C o d e
K : S O -8
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 °C
H a n d lin g C o d e
T U : T u b e
T R : T a p e & R e e l
A P M 7 3 1 3 K :
A P M 7 3 1 3
X X X X X
X X X X X - D a te C o d e
Pin Description
Ordering and Marking Information
Features
Applications
Absolute Maximum Ratings
(T
A
= 25
°
C unless otherwise noted)
·
30V/6A , R
DS(ON)
=21m
(typ.) @ V
GS
=10V
R
DS(ON)
=27m
(typ.) @ V
GS
=4.5V
··
··
·
Super High Dense Cell Design for Extremely
Low R
DS(ON)
··
··
·
Reliable and Rugged
··
··
·
SO-8 Package
·
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D2
D2
D1
D1
SO-8
Top View
N-Channel MOSFET N-Channel MOSFET
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
30
V
GSS
Gate-Source Voltage
±20
V
G1
S1
D1
D1
G2
S2
D2
D2
Copyright
ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw
2
APM7313
APM7313
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
µ
A
30
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=24V , V
GS
=0V
1
µ
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
µ
A
1
1.5
2
V
I
GSS
Gate Leakage Current
V
GS
=
±
20V , V
DS
=0V
±
100
nA
V
GS
=10V , I
DS
=3.5A
21
28
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=4.5V , I
DS
=2A
27
42
m
V
SD
a
Diode Forward Voltage
I
SD
=2A , V
GS
=0V
0.7
1.3
V
Dynamic
b
Q
g
Total Gate Charge
30
36
Q
gs
Gate-Source Charge
5.8
Q
gd
Gate-Drain Charge
V
DS
=15V , I
DS
= 10A
V
GS
=10V
3.8
nC
t
d(ON)
Turn-on Delay Time
11
22
T
r
Turn-on Rise Time
17
33
t
d(OFF)
Turn-off Delay Time
37
68
T
f
Turn-off Fall Time
V
DD
=15V , I
DS
=2A ,
V
GEN
=10V , R
G
=6
20
38
ns
C
iss
Input Capacitance
1200
C
oss
Output Capacitance
210
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=25V
Frequency=1.0MHz
95
pF
Symbol
Parameter
Rating
Unit
I
D
*
Maximum Drain Current Continuous
6
I
DM
Maximum Drain Current Pulsed
24
A
T
A
=25
°
C
2.5
W
P
D
Maximum Power Dissipation
T
A
=100
°
C
1.0
W
T
J
Maximum Junction Temperature
150
°
C
T
STG
Storage Temperature Range
-55 to 150
°
C
R
jA
Thermal Resistance Junction to Ambient
50
°
C/W
* Surface Mounted on FR4 Board, t
10 sec.
Notes
a
: Pulse test ; pulse width
300
µ
s, duty cycle
2
%
b
: Guaranteed by design, not subject to production testing
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Absolute Maximum Ratings (Cont.)
(T
A
= 25
°
C unless otherwise noted)
Copyright
ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw
3
APM7313
0
5
10
15
20
25
30
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
Typical Characteristics
0
10
20
30
40
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50
-25
0
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
Output Characteristics
V
DS
-Drain-to-Source Voltage (V)
I
DS
-Drain Current (A)
Transfer Characteristics
V
GS
-Gate-to-Source Voltage (V)
I
DS
-Drain Current (A)
Threshold Voltage vs. Junction Temperature
T
j
-Junction Temperature (
°
C)
On-Resistance vs. Drain Current
I
DS
-Drain Current (A)
R
DS(ON)
-On-Resistance (
)
I
DS
=250
µ
A
T
J
=125
°
C
T
J
=25
°
C
T
J
=-55
°
C
V
GS
=4,4.5,6,8,10V
V
GS
=2.5V
V
GS
=3V
V
GS
=3.5V
V
GS
=4.5V
V
GS
=10V
V
GS(th)
-Threshold V
oltage (V)
(Normalized)
Copyright
ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw
4
APM7313
Typical Characteristics (Cont.)
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
100
1000
2000
500
0.1
1
10
30
On-Resistance vs. Gate-to-Source Voltage
On-Resistaence vs. Junction Temperature
R
DS(ON)
-On Resistance (
) (Normalized)
R
DS (ON)
- On-Resistance (
)
Gate Voltage (V)
T
j
-Junction Temperature (
°
C)
Capacitance Characteristics
C-Capacitance (pF)
V
GS
=10V
I
DS
=3.5A
Crss
Coss
Ciss
Frequency=1MHz
V
DS
-Drain-to-Source Voltage (V)
3
4
5
6
7
8
9
10
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
I
DS
=3.5A
0
5
10
15
20
25
30
0
2
4
6
8
10
Gate Charge
V
GS
-Gate-to-Source V
oltage (V)
V
D S
=15V
I
D S
= 1 0 A
Q
G
-Total Gate Charge (nC)
Copyright
ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw
5
APM7313
0.01
0.1
1
10
0
20
40
60
80
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
I
SD
-Source Current (A)
V
SD
-Source to Drain Voltage
Time (sec)
Single Pulse Power
Power (W)
T
J
=-55
°
C
T
J
=25
°
C
T
J
=125
°
C
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
Square Wave Pulse Duration (sec)
Normalized Ef
fective T
ransient
Thermal Impedance
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=50
°
C/W
3. T
JM
-T
A
=P
DM
Z
thJA
4. Surface Mounted
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
SINGLE
Normalized Transient Thermal Transient Impedence, Junction to Ambient
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