ChipFind - Datasheet

Part Number AME8814

Download:  PDF   ZIP
Analog Microelectronics, Inc.
1
AME8803/8814
300mA CMOS LDO
n
n
n
n
n
Typical Application
n
n
n
n
n
Functional Block Diagram
n
n
n
n
n
Features
l
Very Low Dropout Voltage
l
Guaranteed 300mA Output
l
Accurate to within 1.5%
l
30
µ
A Quiescent Current
l
Over-Temperature Shutdown
l
Current Limiting
l
Short Circuit Current Fold-back
l
Noise Reduction Bypass Capacitor
l
Power Good Detector
l
Power-Saving Shutdown Mode
l
Space-Saving SOT-26 (SOT-23-6)
l
Factory Pre-set Output Voltages
l
Low Temperature Coefficient
n
n
n
n
n
General Description
The AME8803 family of positive, linear regulators fea-
ture low quiescent current (30
µ
A typ.) with low dropout
voltage, making them ideal for battery applications. The
space-saving SOT-23-6 package is attractive for
"Pocket" and "Hand Held" applications.
These rugged devices have both Thermal Shutdown,
and Current Fold-back to prevent device failure under
the "Worst" of operating conditions.
An additional feature is a "Power Good" detector, which
pulls low when the output is out of regulation. In appli-
cations requiring a low noise, regulated supply, place a
1000pF capacitor between Bypass and ground.
The AME8803 is stable with an output capacitance of
2.2
µ
F or greater.
n
n
n
n
n
Applications
l
Instrumentation
l
Portable Electronics
l
Wireless Devices
l
Cordless Phones
l
PC Peripherals
l
Battery Powered Widgets
l
Electronic Scales
A M P
G N D
O U T
IN
R 1
R 2
P G
Overcurrent
Shutdown
Thermal
Shutdown
E N
V
ref
= 1 . 2 1 5 V
V
ref
x 9 0 %
V
ref
x 1 1 0 %
B Y P
AME8803
O U T
IN
C 3
2.2
µ
F
C 1
1
µ
F
G N D
O U T
5V
P G
BYP
IN
C 2
1nF
E N
Analog Microelectronics, Inc.
2
300mA CMOS LDO
AME8803/8814
n
n
n
n
n
Pin Configuration
n
n
n
n
n
Ordering Information
AME8803
SOT-26 Top View
1. V
IN
4. PG
2. GND
5. BYP
3. EN
6. V
OUT
5
6
4
1
2
3
5
6
4
1
2
3
1. EN
4. V
OUT
2. GND
5. GND
3. BYP
6. V
IN
AME8814
SOT-26 W Top View
Part Number
Marking
Output Package
Operating
Temp.
AME8803AEEY
AAPww
3.3V
SOT-26
-40
O
C to +85
O
C
AME8803BEEY
AAQww
3.0V
SOT-26
-40
O
C to +85
O
C
AME8803CEEY
AARww
2.8V
SOT-26
-40
O
C to +85
O
C
AME8803DEEY
AASww
2.5V
SOT-26
-40
O
C to +85
O
C
AME8803EEEY
AATww
3.8V
SOT-26
-40
O
C to +85
O
C
AME8803FEEY
ABQww
3.6V
SOT-26
-40
O
C to +85
O
C
AME8803GEEY
ACHww
3.5V
SOT-26
-40
O
C to +85
O
C
AME8803HEEY
AGKww
2.7V
SOT-26
-40
O
C to +85
O
C
AME8803IEEY
AEQww
3.4V
SOT-26
-40
O
C to +85
O
C
AME8803JEEY
AGSww
2.85V
SOT-26
-40
O
C to +85
O
C
AME8803KEEY
AHUww
3.7V
SOT-26
-40
O
C to +85
O
C
AME8803LEEY
AJKww
1.5V
SOT-26
-40
O
C to +85
O
C
AME8803MEEY
AJLww
1.8V
SOT-26
-40
O
C to +85
O
C
AME8803NEEY
ALAww
2.9V
SOT-26
-40
O
C to +85
O
C
AME8803OEEY
ALBww
3.1V
SOT-26
-40
O
C to +85
O
C
Analog Microelectronics, Inc.
3
AME8803/8814
300mA CMOS LDO
Part Number
Marking
Output Package Operating Temp.
AME8814AEEY
AIEww
3.3V
SOT-26
-40
O
C to +85
O
C
AME8814BEEY
AIFww
3.0V
SOT-26
-40
O
C to +85
O
C
AME8814CEEY
AIGww
2.8V
SOT-26
-40
O
C to +85
O
C
AME8814DEEY
AIHww
2.5V
SOT-26
-40
O
C to +85
O
C
AME8814EEEY
AIIww
3.8V
SOT-26
-40
O
C to +85
O
C
AME8814FEEY
AIJww
3.6V
SOT-26
-40
O
C to +85
O
C
AME8814GEEY
AIKww
3.5V
SOT-26
-40
O
C to +85
O
C
AME8814HEEY
AILww
2.7V
SOT-26
-40
O
C to +85
O
C
AME8814IEEY
AIMww
3.4V
SOT-26
-40
O
C to +85
O
C
AME8814JEEY
AINww
2.85V
SOT-26
-40
O
C to +85
O
C
AME8814KEEY
AIOww
3.7V
SOT-26
-40
O
C to +85
O
C
AME8814LEEY
AJDww
1.5V
SOT-26
-40
O
C to +85
O
C
AME8814MEEY
AJEww
1.8V
SOT-26
-40
O
C to +85
O
C
AME8814NEEY
AKYww
2.9V
SOT-26
-40
O
C to +85
O
C
AME8814OEEY
AKZww
3.1V
SOT-26
-40
O
C to +85
O
C
n
n
n
n
n
Ordering Information
Please consult AME sales office or authorized Rep./Distributor for other output voltage and package type availability.
Analog Microelectronics, Inc.
4
300mA CMOS LDO
AME8803/8814
n
n
n
n
Absolute M aximum Ratings:
Para me te r
Ma ximum
Unit
Input Voltage
8
V
Output Current
P
D
/ (V
IN
- V
O
)
mA
Output Voltage
GND - 0.3 to V
IN
+ 0.3
V
ESD Classification
B
n
n
n
n
Recommended operating Conditions:
Para me te r
Rating
Unit
Ambient Temperature Range
-40 to +85
o
C
Junction Temperature
-40 to +125
o
C
n
n
n
n
T hermal Information
Para me te r
Packa ge
Ma ximum
Unit
Thermal Resistance (
ja
)
SOT-26
260
Thermal Resistance (
ja
)
SOT-26W
260
Internal Power Dissipation (P
D
)
(
T = 100
o
C)
SOT-26
380
Internal Power Dissipation (P
D
)
(
T = 100
o
C)
SOT-26W
380
Maximum Junction Temperature
150
Maximum Lead Temperature ( 10 Sec)
300
Caution: Stress ab ove the listed ab solute rating may cause permanent damage to the device
o
C / W
mW
o
C
Analog Microelectronics, Inc.
5
AME8803/8814
300mA CMOS LDO
n
n
n
n
n
Electrical Specifications
Parameter
Symbol
Min
Typ
Max
Units
Input Voltage
V
IN
Note 1
7
V
Output Voltage Accuracy
V
O
-1.5
1.5
%
1.2V<V
O(NOM)
<=2.0V
1300
Dropout Voltage
V
DROPOUT
2.0V<V
O(NOM)
<=2.8V
400
2.8V<V
O(NOM)
300
Output Current
I
O
300
mA
Current Limit
I
LIM
300
450
mA
Short Circuit Current
I
SC
150
300
mA
Quiescent Current
I
Q
30
50
µ
A
Ground Pin Current
I
GND
35
µ
A
V
O
< 2.0V
-0.15
0.15
%
2.0V<=V
O
< 4.0V
-0.1
0.02
0.1
%
4.0V <= Vo
-0.4
0.2
0.4
%
Load Regulation
REG
LOAD
-1
0.2
1
%
Over Temerature Shutdown
OTS
150
o
C
Over Temerature Hysterisis
OTH
30
o
C
V
O
Temperature Coefficient
TC
30
ppm/
o
C
f=1kHz
50
PSRR
f=10kHz
20
dB
f=100kHz
15
V
EH
2.0
Vin
V
V
EL
0
0.4
V
I
EH
0.1
µ
A
I
EL
0.5
µ
A
Shutdown Supply Current
I
SD
0.5
1
µ
A
Shutdown Output Voltage
V
O,SD
0
0.4
V
85
75
115
125
PG Leakage Current
I
LC
1
µ
A
PG Voltage Rating
V
PG
7
V
PG Voltage Low
V
OL
0.4
V
Note1:V
IN(min)
=V
OUT
+V
DROPOUT
V
O
<0.8V
I
O
=0mA
Line Regulation
REG
LINE
TA = 25
o
C unless otherwise noted
Test Condition
I
O
=1mA
See
chart
mV
V
O
>1.2V
V
O
>1.2V
I
O
=300mA
V
O
=V
ONOM
-2.0%
I
O
=1mA to 300mA
I
O
=1mA to 300mA
I
O
=1mA
V
IN
=V
O
+1 to V
O
+2
EN Input Threshold
V
IN
=2.7V to 7V
EN Input Bias Current
Power Supply Rejection
I
O
=100mA
C
O
=2.2
µ
F
Output Voltage Noise
eN
f=10Hz to 100kHz
I
O
=10mA
Co=2.2
µ
F
V
IN
=5V, V
O
=0V, V
EN
<V
EL
I
O
=0.4mA, V
EN
<V
EL
V
IN
=2.7V to 7V
V
EN
=V
IN
, V
IN
=2.7V to 7V
V
EN
=0V, V
IN
=2.7V to 7V
30
µ
Vrms
%V
O(NOM)
1.2V <= Vo < 2.5V
Output Under Voltage
V
UV
2.5V <=Vo <= 5.0V
%V
O(NOM)
1.2V <= Vo < 2.5V
V
PG
=7V
V
O
in regulation
I
SINK
=0.4mA
Output Over Voltage
V
OV
2.5V <=Vo <= 5.0V
Analog Microelectronics, Inc.
6
300mA CMOS LDO
AME8803/8814
n
n
n
n
n
Detailed Description
The AME8803 family of CMOS regulators contain a
PMOS pass transistor, voltage reference, error ampli-
fier, over-current protection, thermal shutdown, and
Power Good detection circuitry.
The P-channel pass transistor receives data from the
error amplifier, over-current shutdown, and thermal pro-
tection circuits. During normal operation, the error am-
plifier compares the output voltage to a precision refer-
ence. Over-current and Thermal shutdown circuits be-
come active when the junction temperature exceeds
150
o
C, or the current exceeds 300mA. During thermal
shutdown, the output voltage remains low. Normal op-
eration is restored when the junction temperature
drops below 120
o
C.
The AME8803 switches from voltage mode to current
mode when the load exceeds the rated output current.
This prevents over-stress. The AME8803 also incor-
porates current foldback to reduce power dissipation
when the output is short circuited. This feature becomes
active when the output drops below 0.8volts, and re-
duces the current flow by 65%. Full current is restored
when the voltage exceeds 0.8 volts.
A third capacitor can be connected between the BY-
PASS pin and GND. This capacitor can be a low cost
Polyester Film variety between the value of 0.001 ~
0.01
µ
F. A larger capacitor improves the AC ripple re-
jection, but also makes the output come up slowly. This
"Soft" turn-on is desirable in some applications to limit
turn-on surges.
All capacitors should be placed in close proximity to
the pins. A "Quiet" ground termination is desirable.
This can be achieved with a "Star" connection.
n
n
n
n
n
Enable
The Enable pin normally floats high. When actively,
pulled low, the PMOS pass transistor shuts off, and all
internal circuits are powered down. In this state, the
quiescent current is less than 1
µ
A. This pin behaves
much like an electronic switch.
n
n
n
n
n
Power Good
The AME8803 includes the Power Good feature. Nor-
mally, Pin 4 is "Floating", however, when the output is
not within
±
10% of the specified voltage, it pulls low.
This can occur under the following conditions:
1) Input Voltage too low.
2) During Over-Temperature.
3) During Over-Current.
4) If output is pulled up.
n
n
n
n
n
External Capacitors
The AME8803 is stable with an output capacitor to
ground of 2.2
µ
F or greater. Ceramic capacitors have
the lowest ESR, and will offer the best AC performance.
Conversely, Aluminum Electrolytic capacitors exhibit
the highest ESR, resulting in the poorest AC response.
Unfortunately, large value ceramic capacitors are com-
paratively expensive. One option is to parallel a 0.1
µ
F
ceramic capacitor with a 10
µ
F Aluminum Electrolytic.
The benefit is low ESR, high capacitance, and low over-
all cost.
A second capacitor is recommended between the input
and ground to stabilize Vin. The input capacitor should
be at least 0.1
µ
F to have a beneficial effect.
Analog Microelectronics, Inc.
7
AME8803/8814
300mA CMOS LDO
0
50
100
150
200
250
300
2.5
2.75
3
3.25
3.5
3.75
4
Drop Out Voltage vs Output Voltage
Output Voltage (V)
Drop Out Voltage (mV)
I
L O A D
= 3 0 0 m A
I
L O A D
= 2 0 0 m A
I
L O A D
= 1 0 0 m A
0
50
100
150
200
250
0
50
100
150
200
250
300
Drop Out Voltage vs Load Current
Load Current (mA)
Dropout Voltage (mV)
Top to bottom
V
O U T
=2.5V
V
O U T
=2.8V
V
O U T
=3.0V
V
O U T
=3.3V
V
O U T
=3.5V
V
O U T
=3.8V
Chip Enable Transient Response
Output (1V/DIV) Enable (2V/DIV)
TIME ( 1mS/DIV)
C
L
=2
µ
F
R
L
=10
C
B Y P
=1000pF
0
0
0
0
Chip Enable Transient Response
TIME ( 1mS/DIV)
C
L
=2
µ
F
R
L
=10
Output (1V/DIV) Enable (2V/DIV)
0
5
10
15
20
25
30
35
40
45
0
1
2
3
4
5
6
7
8
Ground Current vs. Input Voltage
Ground Current (
µ
µ
µ
µ
A)
Input Voltage (V)
85
O
C
25
O
C
Load Step ( 1mA-300mA)
I
L
(200mA/DIV) Vo(5mV/DIV)
TIME( 20mS/DIV)
C
L
=2.2
µ
F
C
I N
=2.2
µ
F
Output
I
L o a d
0
Analog Microelectronics, Inc.
8
300mA CMOS LDO
AME8803/8814
-80
-70
-60
-50
-40
-30
-20
-10
1.0E+01
1.0E+02
1.0E+03
1.0E+04
1.0E+05
PSRR ( dB)
Power Supply Rejection Ratio
Frequency (Hz)
C
L
= 5.6
µ
F
Ceramic
I
L
= 100 mA
C
B Y P
= 0
C
B Y P
= 100 pF
C
B Y P
= 1 n F
C
B Y P
= 10 n F
Overtemperature Shutdown
V
OUT
(1V/DIV) I
OUT
(200mA/DIV)
TIME (0.5Sec/DIV)
R
L O A D
=6.6
0
0
-80
-70
-60
-50
-40
-30
-20
1.0E+01
1.0E+03
1.0E+05
1.0E+07
Power Supply Rejection Ratio
PSRR (dB)
Frequency (Hz)
C
L
=2.2
µ
F Tantalum
C
B Y P
=1000pF
1 0 0 m A
100
µ
A
1 m A
1 0 m A
1 0 0 m A
100
µ
A
-80
-70
-60
-50
-40
-30
-20
-10
0
1.0E+01
1.0E+03
1.0E+05
1.0E+07
Power Supply Rejection Ratio
PSRR (dB)
Frequency (Hz)
1 0 0 m A
1 0 m A
1 m A
100
µ
A
1 0 0 m A
100
µ
A
C
L
=2.2
µ
F Tantalum
C
B Y P
=0
Short Circuit Response
TIME (2mS/DIV)
V
OUT
(1V/DIV) I
LOAD
(400mA/DIV)
R
L O A D
=100
R
S H O R T
=0.1
0
0
-80
-70
-60
-50
-40
-30
-20
-10
1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06
PSRR ( dB)
Power Supply Rejection Ratio
Frequency (Hz)
C
L
= 10
µ
F
Tantalum
I
L
= 100 mA
C
B Y P
= 0
C
B Y P
= 100 pF
C
B Y P
= 1 n F
C
B Y P
= 10 n F
Analog Microelectronics, Inc.
9
AME8803/8814
300mA CMOS LDO
Transient Line Response
TIME (2mS/DIV)
V
O
(1mV/DIV) V
IN
(1V/DIV)
C
L
= 2.2
µ
F
V
IN DC
= 5.0V
Noise Measurement
TIME (20mS/DIV)
Vo (1mV/ DIV)
C
L
= 2.2
µ
F
NO FILTER
Current Limit Response
V
OUT
(1V/DIV) I
OUT
(200mA/DIV)
TIME (2mS/DIV)
R
L O A D
=3.3
0
0
10
100
300
0.1
1.0
8.0
SOT-23-5
Safe Operating Area
Output Current (mA)
Input-Output Voltage Differential (V)
Analog Microelectronics, Inc.
10
300mA CMOS LDO
AME8803/8814
0.01
0.1
1
10
100
1000
10000
0
50
100
150
200
ESR (



)
Stable Region
Untested Region
Unstable Region
ILOAD (mA)
C
L
= 1
µ
F
Stability vs. ESR vs I
LOAD
0.01
0.1
1
10
100
1000
10000
0
50
100
150
200
Stable Region
Untested Region
Unstable Region
ILOAD (mA)
ESR (



)
C
L
=3
µ
F
Stability vs. ESR vs I
LOAD
0.001
0.01
0.1
1
10
100
1000
10000
0
50
100
150
200
Stable Region
Untested Region
Unstable Region
ILOAD (mA)
ESR (



)
C
L
=10
µ
F
Stability vs. ESR vs I
LOAD
0.01
0.1
1
10
100
1000
10000
0
50
100
150
200
ILOAD (mA)
Stable Region
Untested Region
Unstable Region
ESR (



)
C
L
= 2
µ
F
Stability vs. ESR vs I
L O A D
Analog Microelectronics, Inc.
11
AME8803/8814
300mA CMOS LDO
27
28
29
30
31
32
33
34
35
-45
-5
25
55
85
Temperature (
0
C)
Quiescent Current @ 5V
(uA)
Quiescent Current vs. Temp.
0.40
0.42
0.44
0.46
0.48
0.50
0.52
0.54
0.56
0.58
-45
-5
25
55
85
Temperature (
0
C)
Load Regulation (%)
Load Regulation vs. Temp.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-45
-5
25
55
85
Temperature (
0
C)
Shut Down Current (uA)
Shut Down Current vs. Temp.
-0.50
-0.45
-0.40
-0.35
-0.30
-0.25
-0.20
-45
-5
25
55
85
Temperature (
0
C)
EN pin LO bias current (uA)
EN pin LO bias Current vs. Temp.
150
160
170
180
190
200
210
220
-45
-5
25
55
85
Temperature (
0
C)
Dropout Voltage @ 300mA
(mV)
Dropout Voltage vs. Temp.
0.15
0.20
0.25
0.30
0.35
0.40
0.45
-45
-5
25
55
85
Temperature (
0
C)
PG VOL @ 0.4mA (V)
PG VOL vs. Temp.
Analog Microelectronics, Inc.
12
300mA CMOS LDO
AME8803/8814
n
n
n
n
n
Package Dimension
SOT-26
SOT-26 (Wide)
M IN
M AX
M IN
M AX
A
1.00
1.40
0.0394
0.0551
A
1
0.00
0.15
0.0000
0.0591
A2
0.70
1.25
0.0276
0.0492
b
0.35
0.50
0.0138
0.0197
C
0.08
0.25
0.0031
0.0098
D
2.70
3.10
0.1063
0.1220
E
1.40
1.80
0.0551
0.0709
e
H
2.60
3.00
0.1024
0.1181
L
0.35
-
0.0138
-



1
0
°
9
°
0
°
9
°
S
1
0.85
1.05
0.0335
0.0413
1.90 BSC
0.0748 BSC
SYM BOLS
M ILLIM ETERS
INCHES
MIN
MAX
MIN
MAX
A
1.00
1.30
0.0937
0.0512
A
1
0.00
0.10
0.000
0.0039
A2
1.00
1.40
0.0937
0.0551
b
0.35
0.50
0.0138
0.0197
C
0.10
0.25
0.0039
0.0098
D
2.70
3.10
0.1063
0.1220
E
1.60
2.00
0.0630
0.0787
e
-
-
-
-
H
2.60
3.00
0.1024
0.1181
L
0.37
-
0.0146
-



1
1
°
9
°
1
°
9
°
S
1
0.85
1.05
0.0335
0.0413
SYMBOLS
MILLIMETERS
INCHES
Life Support Policy:
These products of Analog Microelectronics, Inc. are not authorized for use as critical components in life-
support devices or systems, without the express written approval of the president
of Analog Microelectronics, Inc.
Analog Microelectronics, Inc. reserves the right to make changes in the circuitry and specifications of its
devices and advises its customers to obtain the latest version of relevant information.
©
Analog Microelectronics, Inc., August 2001
Document: 2006-DS8803/8814-E
Corporate Headquarters
Asia Pacific Headquarters
Analog Microelectronics, Inc.
AME, Inc.
3100 De La Cruz Blvd. Suite 201
2F, 187 Kang-Chien Road, Nei-Hu District
Santa Clara, CA. 95054-2046
Taipei 114, Taiwan, R.O.C.
Tel : (408) 988-2388
Tel : 886 2 2627-8687
Fax: (408) 988-2489
Fax : 886 2 2659-2989
www.analogmicro.com
E-Mail: info@analogmicro.com