7-17
Description
The HSCH-9551 is an integrated
antiparallel pair of GaAs Schott-
ky barrier diodes. It is a beamless
version of the HSCH-9251 anti-
parallel pair beam lead diode.
Applications
The HSCH-9551 is a high-perfor-
mance millimeter wave diode
that can be used as a sub-har-
monically pumped mixer or
frequency multiplier in micro-
wave and millimeter wave
transceivers.
Agilent HSCH-9551
GaAs Schottky Diode
Antiparallel Pair
Data Sheet
Chip Size:
620
×
325
µ
m
(24.4
×
12.8 mils)
Chip Size Tolerance:
±
10
µ
m (
±
0.4 mils)
Chip Thickness:
100
µ
m
(
4
mils)
Chip Thickness Tolerance:
±
15
µ
m (
±
0.6 mils)
Bond Pad Sizes:
100
×
200
µ
m (3.9
×
7.9 mils)
This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of
circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local Agilent
Technologies sales representative.
Features
· Low Junction Capacitance
typically 40 fF
· Low Series Resistance
typically 3
· Large bond pads suitable for
automated wire-bonding or
flip-chip assembly
· Polyimide scratch protection
Specifications
· V
F
(1 mA): 700-800 mV
· V
F
(10 mA): 800-850 mV
· R
S
(5 mA): <6
· C
J
(per diode): <0.050 pF
Assembly Techniques
GaAs Schottky diodes are ESD
sensitive. ESD preventive mea-
sures must be employed in all as-
pects of storage, handling, and
assembly.
ESD precautions, handling con-
siderations, die attach and bond-
ing methods are critical factors in
successful diode performance
and reliability.
Agilent application note #54,
"GaAs MMIC ESD, Die Attach
and Bonding Guidelines" pro-
vides basic information on these
subjects.
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