Document Outline
- List of Figures
- 1. Power Output @ dB Gain Compression and 1 dB Compressed Gain vs. Frequency. V DS = 9V, I DS = 250 mA.
- 2. Output Power and Power Added Efficiency vs. Input Power. V DS = 9 V, I DS = 250 mA, f = 4.0 GHz.
- 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. V DS = 9 V, I DS = 250 mA.
- Features
- Description
- Electrical Specifications, TA = 25°C
- 100 mil Flange Package
- ATF-45101 Absolute Maximum Ratings
- ATF-45101 Typical Performance, TA = 25°C
- Typical Scattering Parameters, Common Emitter, ZO = 50 W, TA =25°C, VDS =9 V, I DS =250 mA
- 100 mil Flange Package Dimensions
5-92
2 8 GHz Medium Power
Gallium Arsenide FET
Technical Data
ATF-45101
100 mil Flange Package
Features
· High Output Power:
29.0 dBm Typical P
1 dB
at 4 GHz
· High Gain at 1dB
Compression:
10.0 dB Typical G
1 dB
at 4 GHz
· High Power Efficiency:
38% Typical at 4 GHz
· Hermetic Metal-Ceramic
Stripline Package
Symbol
Parameters and Test Conditions
Units Min.
Typ. Max.
Electrical Specifications, T
A
= 25
°
C
P
1 dB
Power Output @ 1 dB Gain Compression:
f = 4.0 GHz
dBm
28.0
29.0
V
DS
= 9 V, I
DS
= 250 mA
f = 8.0 GHz
28.0
G
1 dB
1 dB Compressed Gain: V
DS
= 9 V, I
DS
= 250 mA
f = 4.0 GHz
dB
9.0
10.0
f = 8.0 GHz
4.0
add
Efficiency @ P
1dB
: V
DS
= 9 V, I
DS
= 250 mA
f = 4.0 GHz
%
38
g
m
Transconductance: V
DS
= 2.5 V, I
DS
= 250 mA
mmho
200
I
DSS
Saturated Drain Current: V
DS
= 1.75 V, V
GS
= 0 V
mA
400
600
800
V
P
Pinch-off Voltage: V
DS
= 2.5 V, I
DS
= 12.5 mA
V
-5.4
-4.0
-2.0
Description
The ATF-45101 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplifica-
tion in the 2 to 8 GHz frequency
range. This nominally 0.5 micron
gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between drain fingers. Total gate
periphery is 2.5 millimeters.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
This device is suitable for applica-
tions in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.
5965-8736E
5-93
ATF-45101 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum
[1]
V
DS
Drain-Source Voltage
V
+14
V
GS
Gate-Source Voltage
V
-7
V
GD
Gate-Drain Voltage
V
-16
I
DS
Drain Current
mA
I
DSS
P
T
Power Dissipation
[2,3]
W
3.6
T
CH
Channel Temperature
°
C
175
T
STG
Storage Temperature
°
C
-65 to +175
Thermal Resistance:
jc
= 42
°
C/W; T
CH
= 150
°
C
Liquid Crystal Measurement:
1
µ
m Spot Size
[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25
°
C.
3. Derate at 24 mW/
°
C for
T
CASE
> 24
°
C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-45101 Typical Performance, T
A
= 25
°
C
FREQUENCY (GHz)
P
1 dB
(dBm)
Figure 1. Power Output @ 1 dB Gain
Compression and 1 dB Compressed
Gain vs. Frequency.
V
DS
= 9V, I
DS
= 250 mA.
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 9 V, I
DS
= 250 mA.
FREQUENCY (GHz)
GAIN (dB)
20
15
10
5
0
30
29
28
27
26
G
1 dB
(dBm)
2.0
6.0
4.0
8.0 10.0 12.0
P
1 dB
G
1 dB
|S
21
|
2
MSG
MAG
1.0
2.0
4.0
6.0
14.0
10.0
25
20
15
10
5
0
Figure 2. Output Power and Power
Added Efficiency vs. Input Power.
V
DS
= 9 V, I
DS
= 250 mA, f = 4.0 GHz.
P
IN
(dBm)
P
OUT
(dBm)
add
(%)
0
5
10
15
20
25
30
35
30
25
20
15
10
5
0
40
30
20
10
0
5-94
Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
°
C, V
DS
= 9 V, I
DS
= 250 mA
Freq.
S
11
S
21
S
12
S
22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
1.0
.89
-88
14.9
5.54
119
-26.2
.049
43
.31
-63
2.0
.83
-135
10.8
3.48
82
-26.0
.050
18
.33
-108
3.0
.81
-158
7.6
2.40
58
-25.8
.051
7
.39
-129
4.0
.84
-174
5.4
1.86
38
-25.5
.053
3
.46
-144
5.0
.82
-170
3.8
1.55
18
-25.2
.055
-2
.50
-154
6.0
.81
152
2.6
1.36
-2
-24.4
.060
-8
.52
-168
7.0
.81
133
1.2
1.15
-25
-23.9
.064
-15
.55
173
8.0
.81
122
-0.3
.97
-42
-23.5
.067
-20
.59
154
9.0
.80
113
-1.8
.81
-60
-22.6
.074
-31
.64
137
10.0
.79
107
-3.2
.69
-73
-22.0
.079
-40
.68
123
11.0
.77
94
-4.6
.59
-91
-21.5
.084
-45
.72
113
12.0
.73
82
-5.8
.51
-106
-20.3
.097
-55
.76
99
13.0
.68
69
-6.7
.46
-123
-18.3
.121
-63
.78
89
14.0
.64
56
-7.1
.44
-137
-15.9
.161
-79
.80
79
A model for this device is available in the DEVICE MODELS section.
100 mil Flange Package Dimensions
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
mm
1
3
R, TYP
4
2
SOURCE
SOURCE
DRAIN
GATE
.12
3.0
.100
2.54
.300 min
.03
0.8
.06
1.6
.044
1.12
.265
6.73
.062 DIA.
1.57 (2) PLCS
.05
1.3
0.025
±
0.003 mils
0.64
±
0.08 mm
.42
10.7
.004
±
.002
.10
±
.05
Package marking code is 451
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