Revision Date: 11/17/03
MMA612
DC to 12 GHz Amplifier
Description:
The MMA612 is a fully matched Darlington Amplifier Die,
constructed with reliable InGaP-GaAs HBT technology.
Exhibits extremely flat gain response over the operating
band.
Features:
·
DC - 12 GHz Broadband Gain Block.
·
Flat gain over bandwidth +/- 1 dB.
·
50 Ohm match Input/Output.
M
MM
MA
A6
61
12
2 D
Diie
e
Parameter
Minimum
Typical
Maximum
Units
Test Conditions
Frequency Range
DC
- - -
12
GHz
Gain
11
12
14
dB
VSWR
- - -
1.50:1
2.00:1
- - -
Input/Output
Power Output
+8
+11
- - -
dBm
P-1 dBGCP
OIP3
+18
+23
- - -
dBm
Noise Figure
- - -
4.8
5.5
dB
DC Supply current
42
48
55
mA
Vs = 6.00 V, Rbias = 22
Temperature Range
-40
- - -
+85
ºC
NOTES:
Temperature: +25 ºC, Vcc = +5.00 Vdc
IMD testing with a frequency separation of 1.22 MHz and an output power of 0 dBm/tone
Absolute Maximum Ratings:
Parameters
Rating
DC voltage (Vcc)
+5.20 V
RF Input Power, continuous
+10 dBm
Operating Temperature
-40 to +85 ºC
Storage Temperature
-55 to +125 ºC
RF Specifications
(TA = +25 °C):
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c.., 975 Stewart Drive, Sunnyvale, CA 94085
TEL: 408-73-8181· FAX: 408-733-7645 · sales@aeroflex-metelics.com · www.aeroflex-metelics.com
Revision Date: 11/17/03
2
RF Performance:
0
1
2
3
4
5
6
7
8
9
10
11
12
Frequency (GHz)
Input VSWR
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
VSWR
+25 °C
+85 °C
-40 °C
0
1
2
3
4
5
8
9
10
11
12
Frequency (GHz)
Output VSWR
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
VSWR
+25 °C
+85 °C
-40 °C
6
7
0
1
2
3
4
5
6
7
8
9
10
11
12
Frequency (GHz)
Gain vs Frequency
0
2
4
6
8
10
12
14
16
18
20
Gain, dB
+25 °C
+85 °C
-40 °C
Power Output vs Temperature
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
11
12
Frequency (GHz)
Pout @ -1dBGCP, dBm
-40 °C
+25 °C
+85 °C
IP3 vs Temperature
0
5
10
15
20
25
30
35
0
2
4
6
Frequency (GHz)
IP3. dBm
+25 °C
+85 °C
-40 °C
1
5
3
7
MMA612
DC to 12 GHz Amplifier
Figure 3.
Figure 1.
Figure 5.
Figure 4.
Figure 2.
A
Ae
erro
offlle
ex
x // M
Me
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elliic
cs
s,, IIn
nc
c.., 975 Stewart Drive, Sunnyvale, CA 94085
TEL: 408-73-8181· FAX: 408-733-7645 · sales@aeroflex-metelics.com · www.aeroflex-metelics.com
Revision Date: 11/17/03
3
Rbias
22 Ohms
C1
C2
L1
MMA612
C3
C4
0.1uF
Vs = 6.00VDC
C1, C2: Set by lowest operating frequency.
L1: Set by lowest operating frequency.
RF IN
RF OUT
Vcc
Vs (V)
6.00
8.00 10.00
12.00
15.00
Rbias (
)
22
43
86
130
200
Power Dissipation (W)
0.10
0.2
0.5
1
2
Application Circuit:
MMA612
DC to 12 GHz Amplifier
Bias Resistor Value vs Supply Voltage:
Die Dimensions:
251
430
562.6
94.6
94.6
252.7
RF OUTPUT
AND BIAS INPUT
RF INPUT
NOTES:
1. DIMENSIONS IN
µ
m
2. CHIP THICKNESS 75
µ
m typ.
3. METAL THICKNESS:
BONDPADS: 3.5
µ
m
BACKSIDE: 3.5
µ
m
DS1X2R2S
D
Diie
e A
Atttta
ac
ch
h::
Gold/Tin (AuSn 80/20) for best operation. 290 ºC Stage temperature under forming gas.
Maximum time at temperature is 30 seconds.
B
Bo
on
nd
diin
ng
g ::
1 mil diameter gold wire. Stage temperature 250 ºC recommended.
Set Ultrasonics to minimum. Force is a critical parameter.
S
Stto
orra
ag
ge
e::
Devices must be stored in a dry nitrogen atmosphere.
Recommended Assembly Techniques:
A
Ae
erro
offlle
ex
x // M
Me
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s
Aeroflex Microelectronic Solutions
975 Stewart Drive, Sunnyvale, CA 94085
TEL: 408-737-8181
Fax: 408-733-7645
Our passion for performance is defined by three
attributes represented by these three icons:
solution-minded, performance-driven and customer-focused.
Aeroflex / Metelics, Inc. reserves the right to make changes to any products
and services herein at any time without notice. Consult Aeroflex or an
authorized sales representative to verify that the information in this data
sheet is current before using this product. Aeroflex does not assume any
responsibility or liability arising out of the application or use of any product
or service described herein, except as expressly agreed to in writing by
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rights, or any other of the intellectual rights of Aeroflex or of third parties.
Copyright 2003 Aeroflex / Metelics. All rights reserved.
www.aeroflex-metelics.com
sales@aeroflex-metelics.com
Revision Date: 11/17/03
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