Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2362
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
DESCRIPTION:
DESCRIPTION:
The MS2362 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty cycles such as IFF, DME,
and TACAN. The MS2362 utilizes internal impedance matching for improved broadband
performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
°
C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
65
V
V
CES
Collector-Emitter Voltage
65
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
5.5
A
P
DISS
Power Dissipation
218.7
W
T
J
Junction Temperature
200
°
°
C
T
STG
Storage Temperature
-65 to +150
°
°
C
Features
·
DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
·
80 W (typ.) IFF 1030 1090 MHz
·
75 W (min.) DME 1025 1150 MHz
·
50 W (typ.) TACAN 960 1215 MHz
·
1025 - 1150 MHz
·
GOLD METALLIZATION
·
P
OUT
= 75 WATTS
·
G
P
= 7.5 dB MINIMUM
·
INTERNAL INPUT MATCHING
·
INFINITE VSWR CAPABILITY @ RATED CONDITIONS
·
COMMON BASE CONFIGURATION
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2362
Thermal Data
Thermal Data
R
TH(J-C)
Thermal Resistance Junction-case
0.8
°
°
C/W
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
°
C)
C)
STATIC
STATIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BV
CBO
I
C
= 10 mA I
E
= 0 mA
65
---
---
V
BV
CES
I
C
= 25 mA V
BE
= 0 V
65
---
---
V
BV
EBO
I
E
= 10 mA I
C
= 0 mA
3.5
---
---
V
I
CBO
V
CE
= 50 V I
E
= 0 mA
---
---
5
mA
h
FE
V
CE
= 5 V I
C
= 100 mA
10
---
100
---
DYNAMIC
DYNAMIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
P
OUT
f =1025 - 1150 MHz P
IN
= 13.5 W V
CE
= 50V
75
---
---
W
G
P
f =1025 - 1150 MHz P
IN
= 13.5 W V
CE
= 50V
7.5
---
---
dB
C
f =1025 - 1150 MHz P
IN
= 13.5 W V
CE
= 50V
30
---
---
%
Conditions: Pulse Width = 10
µ
µ
s Duty Cycle = 1%
This device is suitable for use under other pulse width/duty cycle conditions.
Please contact the factory for specific applications assistance.
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2362
PACKAGE MECHANICAL DATA
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