Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2361
DESCRIPTION:
DESCRIPTION:
The MS2361 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty
cycles such as IFF, DME and TACAN. The MS2361 is packaged in
the 0.280" input matched stripline package resulting in improved
broadband performance and a low thermal resistance.
ABSOLUTE MAXIMU
ABSOLUTE MAXIMUM RATINGS
M RATINGS
(Tcase = 25
°
°
C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
65
V
V
CES
Collector-Emitter Voltage
65
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
5.5
A
P
DISS
Power Dissipation
218.7
W
T
J
Junction Temperature
+200
°
°
C
T
STG
Storage Temperature
-65 to +150
°
°
C
Thermal Data
Thermal Data
R
TH(J-C)
Junction-case Thermal Resistance
0.8
°
°
C/W
Features
Features
·
DESIGNED FOR HIGH POWER PULSED IFF, DME,
TACAN, APPLICATIONS
·
80 WATTS (typ.) IFF 1030 1090 MHz
·
75 WATTS (min.) DME 1025 1150 MHz
·
50 WATTS (typ.) TACAN 960 1215 MHz
·
7.6 dB MIN. GAIN
·
REFRACTORY GOLD METALLIZATION
·
EMITTER BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND RUGGEDNESS
·
INFINITE LOAD VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
·
INPUT MATCHED, COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2361
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
°
C)
C)
STATIC
STATIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BV
CBO
I
C
= 10mA I
E
= 0mA
65
---
---
V
BV
CES
I
C
= 25mA V
BE
= 0V
65
---
---
V
BV
EBO
I
E
= 10mA I
C
= 0mA
3.5
---
---
V
I
CES
V
CE
= 50V I
E
= 0mA
---
---
5
mA
h
FE
V
CE
= 5V I
C
= 100mA
10
---
---
---
DYNAMIC
DYNAMIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
P
OUT
f =1025 - 1150 MHz P
IN
= 13.0W V
CE
= 50V
75
---
---
W
G
P
f =1025 - 1150 MHz P
IN
= 13.0W V
CE
= 50V
7.6
---
---
dB
Note: Pulse Width = 10us, Duty Cycle = 1%
This device is suitable for use under other pulse width/duty cycle conditions.
Please contact the factory for specific application assistance.
IMPEDANCE DATA
IMPEDANCE DATA
FREQ
Z
IN
(
)
Z
CL
(
)
960 MHz
2.5 + j 13.0
4.6 + j 5.5
1030 MHz
5.2 + j 15.0
5.0 + j 5.5
1090 MHz
16.3 + j 15.0
4.8 + j 5.5
1150 MHz
14.7 + j 2.5
4.7 j 7.0
1215 MHz
7.6 + j 0.5
4.7 j 5.0
P
IN
= 13W
V
CC
= 50V
Pulse Width = 10uSec
Duty Cycle = 1%
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2361
PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA
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