Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
MDS1100
1100 Watts, 50 Volts
Pulsed Avionics at 1030 MHz
GENERAL DESCRIPTION
The MDS1100 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems at 1030 MHz, with the pulse width and duty
required for MODE-S applications. The device has gold thin-film metalization
and emitter ballasting for proven highest MTTF. The transistor includes input
and output prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55TU-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25
°
C
1
8750
W
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
) 65
V
Emitter to Base Voltage (BV
ebo
) 4.5
V
Collector Current (I
c
) 100
A
Maximum Temperatures
Storage Temperature
-65 to +200
°
C
Operating Junction Temperature
+200
°
C
ELECTRICAL CHARACTERISTICS @ 25
°
°
°
°
C
SYMBOL CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP MAX UNITS
P
out
Power Out
F = 1030 MHz, V
cc
= 50 Volts
1000
W
P
g
Power
Gain
Note 2
8.9
dB
c
Collector Efficiency
45
%
R
L
Return
Loss
11
dB
Tr
Rise Time
100
nS
Pd Pulse
Droop
0.7
dB
VSWR
Load Mismatch Tolerance
1
F = 1030 MHz, V
cc
= 50 Volts
Note 2
4.0:1
FUNCTIONAL CHARACTERISTICS @ 25
°
°
°
°
C
BV
ebo
Emitter to Base Breakdown
Ie = 50 mA
3.5
V
BV
ces
Collector to Emitter Breakdown Ic = 100 mA
65
V
h
FE
DC Current Gain
Vce = 5V, Ic = 5A
20
jc
1
Thermal Resistance
0.02
°
C/W
NOTES: 1. At rated output power and pulse conditions
2.
128 µs burst, 0.5 µs on/0.5 µs off, 6.4 ms period, Pin = 130 Watts
Rev B, September 2005
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
Gain vs. Output Power
8.2
8.4
8.6
8.8
9
9.2
9.4
9.6
0
200
400
600
800
1000
1200
Pout (W)
Gai
n
(
d
B
m
)
Efficiency vs. Output Power
30
32
34
36
38
40
42
44
46
48
200
400
600
800
1000
1200
Pout (W)
E
ffi
c
i
e
n
cy
(%
)
R (ohms)
jX (ohms)
Zin 1.75
+j2.37
Zcl 0.60
-j1.62
Frequency = 1030 MHz, Vcc = 50V, Pin = 130W
Zin
Zcl
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
MDS1100
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
MDS1100
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